On the nature of CT luminescence in Yb3+:YAG single crystal under low photon energy
Source abstract
Abstract
The charge transfer luminescence process has been extensively studied due to its influence on the optical properties of various phosphors such as photodarkening process which is a limiting factor for the lifetime of high-power fiber lasers. In this work, we report CT luminescence in Yb3+:YAG single crystals at 3.3 eV excitation. It was found that this luminescence is caused by CT processes between Yb3+ ions and perturbed F+ centers formed during crystal growth due to the incorporation of some portion of Y3+ ions into Al3+ sites. CT luminescence in such systems can be produced at low photon energies equal to 3.3 eV excitation, with Stokes shift less than 500 cm−1.
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Research context
OpenAlex topics: Luminescence Properties of Advanced Materials · Solid State Laser Technologies · Photorefractive and Nonlinear Optics
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