Temperature-dependent transverse-field magneto-plasmons properties in InSb
Source abstract
Abstract
Abstract The coupling between plasmons and external fields can facilitate effective light manipulations. Here, we implement time-domain THz spectroscopy in a Voigt reflection geometry to study the transverse-field magneto-optical effects in indium antimonide (InSb) at variable temperatures. The obtained results are analyzed by a multi-carrier model, which allows the properties of both electrons and holes in undoped InSb to be fully characterized between 5 K and 300 K. At higher temperatures, the change in the thermal carrier density effectively modifies the dispersions of the three magneto-plasmon bands and produces strong reflectance modulations that can be sensitively tuned by the temperature. At low temperatures when the conduction is dominated by extrinsically doped electrons, a transport anisotropy in the (001) plane is detected. These results provide a systematic understanding on the magneto-plasmon band structure in InSb and their coupling with THz lights.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Terahertz technology and applications · Quantum and electron transport phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (28)
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