journal article·2017-11

Effect of heat treatment on properties of HfO2 film deposited by ion-beam sputtering

Huasong Liu, Yugang Jiang, Lishuan Wang, Shida Li, Xiao Yang, Chenghui Jiang, Dandan Liu, Yiqin Ji, Feng Zhang, Deying Chen

Optical Materials· Volume 73
Publisher page

Abstract

Abstract The effects of atmosphere heat treatment on optical, stress, and microstructure properties of an HfO2 film deposited by ion-beam sputtering were systematically researched. The relationships among annealing temperature and refractive index, extinction coefficient, physical thickness, forbidden-band width, tape trailer width, Urbach energy, crystal phase structure, and stress were assessed. The results showed that 400 °C is the transformation point, and the microstructure of the HfO2 film changed from an amorphous into mixed-phase structure. Multistage phonons appeared on the HfO2 film, and the trends of the refractive index, extinction coefficient, forbidden-band width change, and Urbach energy shifted from decrease to increase. With the elevation of the annealing temperature, the film thickness increased monotonously, the compressive stress gradually turned to tensile stress, and the transformation temperature point for the stress was between 200 °C and 300 °C. Therefore, the change in the stress is the primary cause for the shifts in thin-film thickness.
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Research context

OpenAlex topics: Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis · Advancements in Semiconductor Devices and Circuit Design

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