Photothermally stimulated creation of electron and hole centers in Ce3+-doped Y2SiO5 single crystals

Abstract The origin and characteristics of afterglow-related processes are studied in Ce3+-doped yttrium oxyorthosilicate single crystals. To clarify the origin of the defects responsible for delayed recombination processes, which worsen the performance of the scintillation materials of this type, the characteristics of the afterglow and thermally stimulated luminescence (TSL) are investigated after selective UV irradiation of Y2SiO5:Ce crystals in the 3–6 eV energy range and in the 80–330 K temperature range. The dependences of the afterglow and TSL intensities on the irradiation energy, temperature and duration are measured. The afterglow and TSL spectra of the UV-irradiated crystals are compared with their photoluminescence spectra. The origin of the electron and hole centers, optically created in Y2SiO5:Ce crystals, and the mechanisms of their creation are discussed.