Correlation between photoluminescence and electroluminescence in GaN-related micro light emitting diodes: Effects of leakage current, applied bias, incident light absorption and carrier escape

Abstract Accurately predicting the peak wavelength and intensity of the electroluminescence spectrum through the photoluminescence method which can be measured without connecting electrodes is not only practically important for the development of micro-LEDs that cannot be fully inspected for device development, but there is also a fundamental importance in understanding the light emitting mechanism of the LEDs. In this study, the correlation and detailed mechanism between PL and EL are systematically analyzed by considering the effects of carrier escape, carrier accumulation, applied bias, leakage current, incident light wavelength and light absorption in order to provide a clear path for all-optical inspection of light emitting diodes and complete understanding of the luminescence mechanism in GaN-related quantum wells.