Influence of Cd0.6Zn0.4S buffer layer on the band alignment and the performance of CZTS thin film solar cells
Source abstract
Abstract
Abstract The CdS film is one of the best candidates for the n-type buffer layer in Cu2ZnSnS4 (CZTS) solar cells. However, the inappropriate band alignment at CdS/CZTS heterojunction result in the high barrier for the photogenerated carriers, which decrease the open-circuit voltage and the short-circuit current. In this paper, the crystallization and the optical bandgap of the Zn-doping Cd0.6Zn0.4S film fabricated by chemical bath deposition were studied. XRD showed that the lattice constant of hexagonal Cd0.6Zn0.4S decreased a little after Zn doping because of the shorter bond length of Zn–S. Photoluminescence and transmittance spectra showed the band gap of Cd0.6Zn0.4S thin film increased from 2.59 to 2.88 eV due to Burstein-Moss shift. The conduction band offset (CBO) obviously decreased from 0.51 eV in CZTS/CdS heterojunction to 0.27 eV in CZTS/Cd0.6Zn0.4S heterojunction which result in the short-circuit current increasing from 12.25 to 15.05 mA/cm2. The conversion efficiency (Eff) and fill factor (FF) of the solar cell based on CZTS/Cd0.6Zn0.4S were increased from 2.31% to 31.06 to 4.88% and 47.45, comparing to CZTS/CdS solar cell.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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