Morphology and random lasing of (110)-oriented ZnO nanowalls
Source abstract
Abstract
Abstract Morphology and near-band-edge emission properties of ZnO grown on R-plane sapphire are studied. It is shown that preliminarily deposited thin Ag layer catalyzes the growth of vertically aligned labyrinth-like ZnO nanowalls with the (110) crystallographic orientation. Room-temperature photoluminescence of ZnO nanowalls is more than two times stronger than that of ZnO grown on bare sapphire. Random lasing with rather low thresholds is excited in ZnO nanowalls.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Random lasers and scattering media · ZnO doping and properties · Advanced Semiconductor Detectors and Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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