GaN nanophosphors for white-light applications
Source abstract
Abstract
Abstract GaN nanoparticles (NPs) were synthesized by carbothermal reduction combined with nitridation, using Ga2O3 powder and graphitic carbon nitride (g-C3N4) as precursors. Characterization of the NPs was performed by X-ray diffraction, scanning electron microscopy, and room-temperature photoluminescence measurements. X-ray photoelectron spectroscopy was also performed to detect the chemical states of the different species. A universal yellow luminescence (YL) band was observed from complexes of Ga vacancies with O anti-sites and of O anti-sites with C. Further increments in the C content were observed with continued growth and induced an additional blue luminescence (BL) band. Tuning of the YL and BL bands resulted in white-light emission under certain experimental conditions, thus offering a new way of employing GaN nanophosphors for solid-state white lighting. Calculations of the correlated color temperature and color-quality scale parameters confirmed the utility of the experimental process for different applications.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (48)
Show source-provided references
1. GaN technology for power electronic applications: a review10.1007/s11664-016-4435-3 ↗
2. Morkoç · 2009
3. Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes10.1063/1.111832 ↗
4. InGaN solar cells: present state of the art and important challenges
5. Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices10.1016/j.mee.2016.03.058 ↗
6. Various types of GaN/InGaN nanostructures grown by MOCVD on Si(111) substrate10.1002/pssc.201200630 ↗
7. Synthesis, structure and optical properties of GaN nanocrystallites10.1016/j.mssp.2004.07.005 ↗
8. Crystal-phase quantum dots in GaN quantum wires10.1103/PhysRevB.93.115305 ↗
9. Growth of pillarlike GaN nanostructures10.1143/JJAP.44.5664 ↗
10. Femtosecond laser direct writing of microholes on roughened ZnO for output power enhancement of InGaN light-emitting diodes10.1364/OL.41.003463 ↗
11. White light emission from GaN stack layers doped by different rare-earth metals10.7567/JJAP.54.02BA03 ↗
12. Synthesis and optical properties of Eu3+ and Tb3+ doped GaN nanocrystallite powders10.1016/j.optmat.2005.09.020 ↗
13. Multi-color broadband visible light source via GaN hexagonal annular structure10.1038/srep05514 ↗
14. Impurity states are the origin of yellow-band emission in GaN structures produced by epitaxial lateral overgrowth10.1063/1.125532 ↗
15. Highly pure green light emission of perovskite CsPbBr3 quantum dots and their application for green light-emitting diodes10.1364/OE.24.015071 ↗
16. A Flexible GaN nanowire array-based schottky-type visible light sensor with strain-enhanced photoresponsivity10.1002/aelm.201500169 ↗
17. Substitutional and interstitial carbon in wurtzite GaN10.1063/1.1498879 ↗
18. Nature of deep center emissions in GaN10.1063/1.3389497 ↗
19. Identification of the gallium vacancy–oxygen pair defect in GaN10.1103/PhysRevB.80.153202 ↗
20. Group-III nitride nanoparticles-synthesis and photoluminescence studies
21. Jpn. Mechanism of yellow luminescence in GaN10.1143/JJAP.19.2395 ↗
22. Properties of the yellow luminescence in undoped GaN epitaxial layers10.1103/PhysRevB.52.16702 ↗
23. Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition10.1103/PhysRevB.51.13326 ↗
24. Yellow luminescence and related deep states in undoped GaN10.1103/PhysRevB.55.4689 ↗
25. Yellow and green luminescence in a freestanding GaN template10.1063/1.1371961 ↗
26. Carbon defects as sources of the green and yellow luminescence bands in undoped GaN10.1103/PhysRevB.90.235203 ↗
27. Two charge states of dominant acceptor in unintentionally doped GaN: evidence from photoluminescence study10.1063/1.1531227 ↗
28. The effect of nitridation temperature on the structural, optical and electrical properties of GaN nanoparticles10.1039/C3CE42417K ↗
29. Blue luminescence from amorphous GaN nanoparticles synthesized in situ in a polymer10.1063/1.123819 ↗
30. Photoluminescence study of gallium nitride thin films obtained by infrared close space vapor transport10.3390/ma6031050 ↗
31. Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers10.1016/S0921-5107(01)01050-9 ↗
32. Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure10.1038/srep13739 ↗
33. White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids10.1364/OE.23.00A401 ↗
34. Synthesis routes and characterization of high-purity, single-phase gallium nitride powders10.1111/j.1151-2916.1996.tb08977.x ↗
35. Thermal plasma synthesis of crystalline gallium nitride nanopowder from gallium nitrate hydrate and melamine10.3390/nano6030038 ↗
36. Synthesis and characterization of nanocrystalline gallium nitride by nitridation of Ga-EDTA complex10.1016/j.jallcom.2010.03.068 ↗
37. Reaction intermediate(s) in the conversion of h-gallium oxide to gallium nitride under a flow of ammonia10.1016/S0167-577X(02)00713-9 ↗
38. Reaction mechanism for the ammonolysis of β-gallium oxide to gallium nitride10.2109/jcersj2.121.460 ↗
39. Use of polymeric carbon nitride in the nitridation of gallium oxide to gallium nitride10.2109/jcersj2.16129 ↗
40. Route to GaN and VN assisted by carbothermal reduction process10.1021/ja055877i ↗
41. Luminescence properties of defects in GaN10.1063/1.1868059 ↗
42. Influence of oxygen incorporation on the defect structure of GaN microrods and nanowires. An XPS and CL study10.1088/0268-1242/31/5/055006 ↗
43. Solid-phase diffusion of carbon into GaN using SiNx/CNx/GaN structure10.1143/JJAP.46.L224 ↗
44. Charge transfer in transition metal carbides and related compounds studied by esca10.1016/0022-3697(69)90252-2 ↗
45. Gallium vacancies and the yellow luminescence in GaN10.1063/1.117767 ↗
46. Nature of deep center emissions in GaN10.1063/1.3389497 ↗
47. On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy10.1063/1.363653 ↗
48. Yellow luminescence band in undoped GaN revealed by two-wavelength excited photoluminescence10.1016/j.optmat.2016.09.003 ↗