Titanium distribution in Ti-sapphire single crystals grown by Czochralski and Verneuil technique
Source abstract
Abstract
The distributions of Ti3+ and Ti4+ ions were evaluated by photoluminescence measurement in the wafers cut from different positions of the ingots grown by Czochralski and Verneuil techniques. Particular radial distributions of Ti4+ as function of the position in the ingot were observed in the crystals grown by Verneuil technique different than the crystals grown by Czochralski method.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Metal and Thin Film Mechanics
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