Novel red phosphors LaBSiO5 co-doped with Eu3+, Al3+ for near-UV light-emitting diodes

Abstract Red-emitting phosphors LaBSiO5:Eu3+ and LaBSiO5:Eu3+, Al3+ were synthesized by the conventional solid state method at 1100 °C. The structure and luminescent properties of these phosphors are investigated. LaBSiO5:Eu3+ and LaBSiO5:Eu3+, Al3+ could be efficiently excited by near ultraviolet light with the strongest excitation peak at 395 nm. The main emission peak is located at around 616 nm, which corresponds to the transition of 5D0 → 7F2 of Eu3+ ions. The emission intensity of LaBSiO5:Eu3+ was enhanced by introducing Al3+ ions. Compared with Y2O2S:0.05Eu3+, the sample La0.70B0.75SiO5:0.30Eu3+, 0.25Al3+ shares the intense red emission, and its emission intensity is about 3.8 times as strong as that of Y2O2S:0.05Eu3+ under 395 nm light excitation. Bright red light can be observed from the red LED based on La0.70B0.75SiO5:0.30Eu3+, 0.25Al3+, hence La0.70B0.75SiO5:0.30Eu3+, 0.25Al3+ maybe find application on near-UV InGaN-based white LEDs.