Size dependent photoresponse characteristics of crystalline Ge quantum dots based photodetectors
Source abstract
Abstract
Abstract We report on the size dependent photoresponse behaviour of crystalline Ge quantum dots (QDs) dispersed within the silica matrix. Our findings demonstrate an increasing nature of EQE with increase in QDs size, which could be attributed to the combined effect of Coulomb interaction of photogenerated carriers, QD/silica interface defects and electric field driven carrier separation and tunneling through the oxide barriers. In this regard, the bias dependent nonlinear response of the photocurrent has been explained on the basis of cold field emission (CFE) model. Besides, the EQE is extended (>100%) for larger sized QDs, suggesting the trapping of slower holes in Ge QDs creating a charge neutrality issue.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Quantum Dots Synthesis And Properties · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (22)
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1. Quantum confinement in Si and Ge nanostructures: theory and experiment10.1063/1.4835095 ↗
2. Nanocrystals for silicon-based light-emitting and memory devices10.1088/0022-3727/46/15/153001 ↗
3. Moore's law: the future of Si microelectronics10.1016/S1369-7021(06)71539-5 ↗
4. A ultraviolet-visible-near infrared photodetector using nanocrystalline Si superlattice10.1063/1.3210784 ↗
5. Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer10.1063/1.2450653 ↗
6. Role of Ge nanoclusters in the performance of photodetectors compatible with Si technology10.1016/j.tsf.2013.09.028 ↗
7. High-efficiency silicon-compatible photodetectors based on Ge quantum dots10.1063/1.3597360 ↗
8. Size-dependent characterization of embedded Ge nanocrystals: structural and thermal properties10.1103/PhysRevB.78.094112 ↗
9. Structural and optical properties of germanium nanostructures on Si(100) and embedded in high-k oxides10.1186/1556-276X-6-224 ↗
10. Characteristics of Ge nanocrystals grown by RF magnetron sputtering10.4028/www.scientific.net/AMR.31.89 ↗
11. Multilayer Ge nanocrystals embedded within Al2O3 matrix for high performance floating gate memory devices10.1063/1.4929828 ↗
12. Size dependent light absorption modulation and enhanced carrier transport in germanium quantum dots devices10.1016/j.solmat.2014.09.012 ↗
13. Size-dependent photocurrent of photodetectors with silicon nanocrystals10.1063/1.3130086 ↗
14. Microstructural, chemical bonding, stress development and charge storage characteristics of Ge nanocrystals embedded in hafnium oxide10.1007/s11051-010-0054-8 ↗
15. Solution-processed PbS quantum dot infrared photodetectors and photovoltaics10.1038/nmat1299 ↗
16. Light absorption in hybrid silicon-on-insulator/quantum dot waveguides10.1364/OE.21.023272 ↗
17. High efficiency Si/CdS radial nanowire heterojunction photodetectors using etched Si nanowire templates10.1021/jp210455w ↗
18. Hot exciton dissociation in a conjugated polymer10.1103/PhysRevLett.82.1321 ↗
19. Defect-engineered blue-violet electroluminescence from Ge nanocrystal rich SiO2 layers by Er doping10.1063/1.3183904 ↗
20. Use of Millikan–Lauritsen plots, rather than Fowler–Nordheim plots, to analyze field emission current-voltage data10.1063/1.3140602 ↗
21. Cold field emission dominated photoconductivity in ordered three-dimensional assemblies of octapod-shaped CdSe/CdS nanocrystals10.1039/c3nr01588b ↗
22. Room-temperature efficient light detection by amorphous Ge quantum wells10.1186/1556-276X-8-128 ↗