Localized exciton luminescence in YVO4:Bi3+
Source abstract
Abstract
Abstract Spectral luminescence parameters of pure and Bi-doped YVO4 microcrystals with different bismuth content (from 0.1 to 20 wt%) are studied in the 4.2–500 K temperature range. The broad photoluminescence band peaked at 570 nm is caused by localized exciton, which is formed by the electronic transition from bismuth to vanadium states. The temperature dependence of luminescence decay kinetics provides additional evidence of the localized exciton luminescence of Bi-doped YVO4. Band structure calculations reveal location of bismuth 6s2 states above the top of valence band formed by 2p oxygen states by ∼0.4 eV.
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Research context
OpenAlex topics: Luminescence Properties of Advanced Materials · Glass properties and applications · Solid State Laser Technologies
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References (44)
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