Improving AlGaN-based ultraviolet-C (UV–C) light-emitting diodes by introducing quaternary-graded AlInGaN final quantum barrier

Abstract We present the analysis of the reference and quaternary-graded final quantum barrier (QGFQB) AlGaN-based ultraviolet (UV–C) light-emitting diodes numerically in this work. The efficiency droop in the reference structure is ~79% which is reduced to ~8% in our proposed quaternary-graded final quantum barrier device. The emission spectrum of the proposed structure is improved by more than twofold. The simulation results show that the performance of our proposed device is improved due to enhanced carrier concentration and radiative recombination rate.