journal article·2025-01-17

Ru Nanograting-Enhanced Ga2O3 Solar-Blind Photodetectors via Localized Surface Plasmon Resonance

Jinjin Wang, Yuqing Yang, Zheyang Chen, Zeng Liu, Xueqiang Ji, Jianying Yue, Jieyun Yan, Shan Li, Weihua Tang, Peigang Li

ACS Applied Nano Materials· Volume 8· Issue 2
Publisher page

Abstract

Plasmonic nanoarray structures offer great potential for high-performance photodetectors due to their excellent ability to effectively trap light. In this work, Ga 2 O 3 solar-blind photodetectors with Ru nanogratings were designed, precisely fabricated, and characterized systematically for the first time. The Ru nanograting through localized surface plasmon resonance significantly concentrates the optical field, reduces the transmittance, and enhances light–matter interactions, ultimately increasing absorbance. Integrating the Ru nanograting into Ga 2 O 3 films induces a blue shift in the response peak, from 245 nm in Ga 2 O 3 films to 215 nm. Meanwhile, the peak current rises dramatically from 4.9 × 10 –11 to 1.3 × 10 –9 A. The peak responsivity and specific detectivity are increased by 4.9 × 10 2 times and 6.8 × 10 2 times, respectively. This modification also accelerates the response speed, with τ r and τ d, of 0.96/0.14 s, notably shorter than the 1.57/0.47 s in Ga 2 O 3 films. The mechanisms underlying strengthened absorbance and light–matter interactions are comprehensively explained through both simulated and experimental data. This work lays the theoretical and experimental groundwork for future high-performance Ga 2 O 3 -based photodetectors.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · GaN-based semiconductor devices and materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Integrated Circuits & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China

School of Electronic Information Engineering, Inner Mongolia University, Hohhot 010021, China

College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

Funding

Beijing University of Posts and Telecommunications · National Key Research and Development Program of China · Inner Mongolia University · National Natural Science Foundation of China

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