Spin coherence in two-dimensional materials
Source abstract
Abstract
Abstract Spin defects in semiconducting solids are promising platforms for the realization of quantum bits. At low temperature and in the presence of a large magnetic field, the central spin decoherence is mainly due to the fluctuating magnetic field induced by nuclear spin flip-flop transitions. Using spin Hamiltonians and a cluster expansion method, we investigate the electron spin coherence of defects in two-dimensional (2D) materials, including delta-doped diamond layers, thin Si films, MoS2, and h-BN. We show that isotopic purification is much more effective in 2D than in three-dimensional materials, leading to an exceptionally long spin coherence time of more than 30 ms in an isotopically pure monolayer of MoS2.
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Research context
OpenAlex topics: Diamond and Carbon-based Materials Research · Electronic and Structural Properties of Oxides · Semiconductor materials and devices
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References (49)
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