Manipulation of Dirac states in polymorphic and dual topological insulating phases of van der Waals systems
Source abstract
Abstract
Van der Waals (vdW) layered systems provide a versatile platform for exploring dual topological insulator phases, characterized by the coexistence of nontrivial $${{\mathbb{Z}}}2$$ invariants and mirror Chern numbers $${C}M$$ . Here, we demonstrate that stacking sequences in vdW materials can introduce additional mirror symmetry, enabling surface states robust against perturbations through multiple symmetry protections. The polymorphic nature of these systems introduces stacking-dependent mirror planes, allowing control over the topology of surface Dirac states. We further show that the spin texture of these surface states determines the direction of Dirac point shifts under time-reversal symmetry breaking. This response reveals the interplay between spin momentum locking and external fields. Additionally, we find that surface responses to magnetic fields vary with termination layers, offering enhanced tunability. These results highlight the potential of vdW systems as robust platforms for realizing and manipulating symmetry-protected topological phases, with promising implications for spintronic and quantum device applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Topological Materials and Phenomena · Graphene research and applications · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (35)
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1. Hasan, M. Z. & Kane, C. L. Colloquium: Topological insulators. Rev. Mod. Phys. 82, 3045 (2010).10.1103/RevModPhys.82.3045 ↗
2. Ando, Y. & Fu, L. Topological crystalline insulators and topological superconductors: From concepts to materials. Annu. Rev. Condens. Matter Phys. 6, 361–381 (2015).10.1146/annurev-conmatphys-031214-014501 ↗
3. Kane, C. L. & Mele, E. J. Z2 topological order and the quantum spin hall effect. Phys. Rev. Lett. 95, 146802 (2005).10.1103/PhysRevLett.95.146802 ↗
4. Fu, L., Kane, C. L. & Mele, E. J. Topological insulators in three dimensions. Phys. Rev. Lett. 98, 106803 (2007).10.1103/PhysRevLett.98.106803 ↗
5. Zhang, H. et al. Topological insulators in Bi2Se3, Bi2Te3, and Sb2Te3 with a single Dirac cone on the surface. Nat. Phys. 5, 438–442 (2009).10.1038/nphys1270 ↗
6. Chen, Y. L. et al. Experimental realization of a three-dimensional topological insulator, Bi2Te3. Science 325, 178–181 (2009).10.1126/science.1173034 ↗
7. Kang, S.-H., Park, J., Woo, S. & Kwon, Y.-K. Two-dimensional Dirac fermions on oxidized black phosphorous. Phys. Chem. Chem. Phys. 21, 24206–24211 (2019).10.1039/C9CP04372A ↗
8. Fu, L. Topological crystalline insulators. Phys. Rev. Lett. 106, 106802 (2011).10.1103/PhysRevLett.106.106802 ↗
9. Hsieh, T. H. et al. Topological crystalline insulators in the SnTe material class. Nat. Commun. 3, 982 (2012).10.1038/ncomms1969 ↗
10. Tanaka, Y. et al. Experimental realization of a topological crystalline insulator in SnTe. Nat. Phys. 8, 800–803 (2012).10.1038/nphys2442 ↗
11. Rauch, T., Flieger, M., Henk, J., Mertig, I. & Ernst, A. Dual topological character of chalcogenides: Theory for Bi2Te3. Phys. Rev. Lett. 112, 016802 (2014).10.1103/PhysRevLett.112.016802 ↗
12. Eschbach, M. et al. Bi1Te1 is a dual topological insulator. Nat. Commun. 8, 14976 (2017).10.1038/ncomms14976 ↗
13. Facio, J. I. et al. Dual topology in jacutingaite Pt2HgSe3. Phys. Rev. Mater. 3, 074202 (2019).10.1103/PhysRevMaterials.3.074202 ↗
14. Bao, W. et al. Stacking-dependent band gap and quantum transport in trilayer graphene. Nat. Phys. 7, 948–952 (2011).10.1038/nphys2103 ↗
15. Lui, C. H., Li, Z., Mak, K. F., Cappelluti, E. & Heinz, T. F. Observation of an electrically tunable band gap in trilayer graphene. Nat. Phys. 7, 944–947 (2011).10.1038/nphys2102 ↗
16. Zhou, X. et al. Strong second-harmonic generation in atomic layered GaSe. J. Am. Chem. Soc. 137, 7994–7997 (2015).10.1021/jacs.5b04305 ↗
17. Mengle, K. A. & Kioupakis, E. Impact of the stacking sequence on the bandgap and luminescence properties of bulk, bilayer, and monolayer hexagonal boron nitride. APL Mater. 7, 021106 (2019).10.1063/1.5087836 ↗
18. Liu, J., Wang, H., Fang, C., Fu, L. & Qian, X. van der Waals Stacking-Induced Topological Phase Transition in Layered Ternary Transition Metal Chalcogenides. Nano Lett. 17, 467–475 (2017).10.1021/acs.nanolett.6b04487 ↗
19. Noguchi, R. et al. Evidence for a higher-order topological insulator in a three-dimensional material built from van der Waals stacking of bismuth-halide chains. Nat. Mater. 20, 473–479 (2021).10.1038/s41563-020-00871-7 ↗
20. Lee, S., Kwon, Y.-K., Kim, M. & Yi, G.-C. Novel Polytype of III-VI Metal Chalcogenides Nano Crystals Realized in Epitaxially Grown InTe. Small 20, 2308925 (2024).10.1002/smll.202308925 ↗
21. Lee, S., Kwon, Y.-K., Yi, G.-C. & Kim, M. Unveiling Trigonal Anti-Prismatic Structure and Stacking Sequences in InTe. Small 21, 2408560 (2025).10.1002/smll.202408560 ↗
22. Lee, S., Kim, M. & Kwon, Y.-K. Unconventional hidden Rashba effects in two-dimensional InTe. npj 2D Mater. Appl. 7, 43 (2023).10.1038/s41699-023-00410-3 ↗
23. Lee, S. & Kwon, Y.-K. Unveiling Giant Hidden Rashba Effects in Two-Dimensional Si2Bi2. npj 2D Mater. Appl. 4, 45 (2020).10.1038/s41699-020-00180-2 ↗
24. Qi, X.-L. & Zhang, S.-C. Topological insulators and superconductors. Rev. Mod. Phys. 83, 1057–1110 (2011).10.1103/RevModPhys.83.1057 ↗
25. Tokura, Y., Yasuda, K. & Tsukazaki, A. Magnetic topological insulators. Nat. Rev. Phys. 1, 126–143 (2019).10.1038/s42254-018-0011-5 ↗
26. Pesin, D. & MacDonald, A. H. Spintronics and pseudospintronics in graphene and topological insulators. Nat. Mater. 11, 409–416 (2012).10.1038/nmat3305 ↗
27. Maciejko, J., Hughes, T. L. & Zhang, S.-C. The quantum spin Hall effect. Annu. Rev. Condens. Matter Phys. 2, 31–53 (2011).10.1146/annurev-conmatphys-062910-140538 ↗
28. Cai, H. et al. Synthesis and emerging properties of 2D layered III-VI metal chalcogenides. Appl. Phys. Rev. 6, 041312 (2019).10.1063/1.5123487 ↗
29. Zhu, Z., Cheng, Y. & Schwingenschlögl, U. Topological Phase Transition in Layered GaS and GaSe. Phys. Rev. Lett. 108, 266805 (2012).10.1103/PhysRevLett.108.266805 ↗
30. Ren, Y., Qiao, Z. & Niu, Q. Engineering Corner States from Two-Dimensional Topological Insulators. Phys. Rev. Lett. 124, 166804 (2020).10.1103/PhysRevLett.124.166804 ↗
31. Kresse, G. & Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. 54, 11169 (1996).10.1103/PhysRevB.54.11169 ↗
32. Monkhorst, H. J. & Pack, J. D. Special points for Brillouin-zone integrations. Phys. Rev. 13, 5188 (1976).10.1103/PhysRevB.13.5188 ↗
33. Pizzi, G. et al. Wannier90 as a community code: New features and applications. J. Phys. Condens. Matter 32, 165902 (2020).10.1088/1361-648X/ab51ff ↗
34. Lopez Sancho, M. P., Lopez Sancho, J. M., Sancho, J. M. L. & Rubio, J. Highly convergent schemes for the calculation of bulk and surface Green functions. J. Phys. F: Met. Phys. 15, 851–858 (1985).10.1088/0305-4608/15/4/009 ↗
35. Wu, Q., Zhang, S., Song, H.-F., Troyer, M. & Soluyanov, A. A. WannierTools: An open-source software package for novel topological materials. Comput. Phys. Commun. 224, 405–416 (2018).10.1016/j.cpc.2017.09.033 ↗