Signature of multilayer growth of 2D layered Bi2Se3 through heteroatom-assisted step-edge barrier reduction
Source abstract
Abstract
Abstract During growth of two-dimensional (2D) materials, abrupt growth of multilayers is practically unavoidable even in the case of well-controlled growth. In epitaxial growth of a quintuple-layered $${{\rm{Bi}}}2{{\rm{Se}}}3$$ film, we observe that the multilayer growth pattern deduced from in situ x-ray diffraction implies nontrivial interlayer diffusion process. Here we find that an intriguing diffusion process occurs at step edges where a slowly downward-diffusing Se adatom having a high step-edge barrier interacts with a Bi adatom pre-existing at step edges. The Se–Bi interaction lowers the high step-edge barrier of Se adatoms. This drastic reduction of the overall step-edge barrier and hence increased interlayer diffusion modifies the overall growth significantly. Thus, a step-edge barrier reduction mechanism assisted by hetero adatom–adatom interaction could be fairly general in multilayer growth of 2D heteroatomic materials.
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Research context
OpenAlex topics: Topological Materials and Phenomena · Graphene research and applications · 2D Materials and Applications
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References (35)
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