Lithographically patterned metallic conduction in single-layer MoS2 via plasma processing
Source abstract
Abstract
Abstract Tailoring the electrical transport properties of two-dimensional transition metal dichalcogenides can enable the formation of atomically thin circuits. In this work, cyclic hydrogen and oxygen plasma exposures are utilized to introduce defects and oxidize MoS2 in a controlled manner. This results in the formation of sub-stochiometric MoO3−x, which transforms the semiconducting behavior to metallic conduction. To demonstrate functionality, single flakes of MoS2 were lithographically oxidized using electron beam lithography and subsequent plasma exposures. This enabled the formation of atomically thin inverters from a single flake of MoS2, which represents an advancement toward atomically thin circuitry.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (41)
Show source-provided references
1. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).10.1103/PhysRevLett.105.136805 ↗
2. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011).10.1038/nnano.2010.279 ↗
3. Chhowalla, M. et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 5, 263–275 (2013).10.1038/nchem.1589 ↗
4. Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J. & Hersam, M. C. Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. ACS Nano 8, 1102–1120 (2014).10.1021/nn500064s ↗
5. Cheng, R. et al. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics. Nat. Commun. 5, 5143 (2014).10.1038/ncomms6143 ↗
6. Radisavljevic, B., Whitwick, M. B. & Kis, A. Integrated circuits and logic operations based on single-layer MoS2. ACS Nano 5, 9934–9938 (2011).10.1021/nn203715c ↗
7. Ross, J. S. et al. Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions. Nat. Nano 9, 268–272 (2014).10.1038/nnano.2014.26 ↗
8. Li, G. et al. All the catalytic active sites of MoS2 for hydrogen evolution. J. Am. Chem. Soc. 138, 16632–16638 (2016).10.1021/jacs.6b05940 ↗
9. Li, G. et al. Activating MoS2 for pH-universal hydrogen evolution catalysis. J. Am. Chem. Soc. 139, 16194–16200 (2017).10.1021/jacs.7b07450 ↗
10. Ling, X. et al. Parallel stitching of 2D materials. Adv. Mater. 28, 2322–2329 (2016).10.1002/adma.201505070 ↗
11. Zhao, M. et al. Large-scale chemical assembly of atomically thin transistors and circuits. Nat. Nanotechnol. 11, 954–959 (2016).10.1038/nnano.2016.115 ↗
12. Stanford, M. G., Rack, P. D. & Jariwala, D. Emerging nanofabrication and quantum confinement techniques for 2D materials beyond graphene. npj 2D Mater. Appl. 2, 20 (2018).10.1038/s41699-018-0065-3 ↗
13. Lin, Z. et al. Defect engineering of two-dimensional transition metal dichalcogenides. 2D Mater. 3, 022002 (2016).10.1088/2053-1583/3/2/022002 ↗
14. Mahjouri-Samani, M. et al. Tailoring vacancies far beyond intrinsic levels changes the carrier type and optical response in monolayer MoSe2−x crystals. Nano. Lett. 16, 5213–5220 (2016).10.1021/acs.nanolett.6b02263 ↗
15. Fox, D. S. et al. Nanopatterning and electrical tuning of MoS2 layers with a subnanometer helium ion beam. Nano Lett. 15, 5307–5313 (2015).10.1021/acs.nanolett.5b01673 ↗
16. Stanford, M. G. et al. Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: enabling nanoscale direct write homo-junctions. Sci. Rep. 6, 27276 (2016).10.1038/srep27276 ↗
17. Stanford, M. G. et al. Tungsten diselenide patterning and nanoribbon formation by gas-assisted focused-helium-ion-beam-induced etching. Small Methods 1, 1600060 (2017).10.1002/smtd.201600060 ↗
18. Iberi, V. et al. Nanoforging single layer MoSe2 through defect engineering with focused helium ion beams. Sci. Rep. 6, 30481 (2016).10.1038/srep30481 ↗
19. Ghorbani-Asl, M., Kretschmer, S., Spearot, D. E. & Krasheninnikov, A. V. Two-dimensional MoS2 under ion irradiation: from controlled defect production to electronic structure engineering. 2D Mater. 4, 025078 (2017).10.1088/2053-1583/aa6b17 ↗
20. Pudasaini, P. R. et al. High performance top-gated multilayer WSe2 field effect transistors. Nanotechnology 28, 475202 (2017).10.1088/1361-6528/aa8081 ↗
21. Khondaker, S. I. & Islam, M. R. Bandgap engineering of MoS2 flakes via oxygen plasma: a layer dependent study. J. Phys. Chem. C 120, 13801–13806 (2016).10.1021/acs.jpcc.6b03247 ↗
22. Choudhary, N. et al. Two-dimensional lateral heterojunction through bandgap engineering of MoS2 via oxygen plasma. J. Phys. Condens. Matter 28, 364002 (2016).10.1088/0953-8984/28/36/364002 ↗
23. Kang, N., Paudel, H. P., Leuenberger, M. N., Tetard, L. & Khondaker, S. I. Photoluminescence quenching in single-layer MoS2 via oxygen plasma treatment. J. Phys. Chem. C 118, 21258–21263 (2014).10.1021/jp506964m ↗
24. Islam, M. R. et al. Tuning the electrical property via defect engineering of single layer MoS2 by oxygen plasma. Nanoscale 6, 10033–10039 (2014).10.1039/C4NR02142H ↗
25. Tosun, M. et al. Air-stable n-doping of WSe2 by anion vacancy formation with mild plasma treatment. ACS Nano 10, 6853–6860 (2016).10.1021/acsnano.6b02521 ↗
26. Liu, Y. et al. Thermal oxidation of WSe2 nanosheets adhered on SiO2/Si substrates. Nano Lett. 15, 4979–4984 (2015).10.1021/acs.nanolett.5b02069 ↗
27. Stanford, M. G. et al. High conduction hopping behavior induced in transition metal dichalcogenides by percolating defect networks: toward atomically thin circuits. Adv. Funct. Mater. 27, 1702829 (2017).10.1002/adfm.201702829 ↗
28. Lu, J. et al. Atomic healing of defects in transition metal dichalcogenides. Nano Lett. 15, 3524–3532 (2015).10.1021/acs.nanolett.5b00952 ↗
29. Addou, R. et al. One dimensional metallic edges in atomically thin WSe2 induced by air exposure. 2D Mater. 5, 025017 (2018).10.1088/2053-1583/aab0cd ↗
30. Jadwiszczak, J. et al. Oxide-mediated recovery of field-effect mobility in plasma-treated MoS2. Sci. Adv. 4, eaao5031 (2018).10.1126/sciadv.aao5031 ↗
31. Lu, A.-Y. et al. Janus monolayers of transition metal dichalcogenides. Nat. Nanotechnol. 12, 744 (2017).10.1038/nnano.2017.100 ↗
32. Yamamoto, M. et al. Self-limiting layer-by-layer oxidation of atomically thin WSe2. Nano Lett. 15, 2067–2073 (2015).10.1021/nl5049753 ↗
33. Lee, C. H. et al. A self-limiting layer-by-layer etching technique for 2H-MoS2. Appl. Phys. Express 10, 35201 (2017).10.7567/APEX.10.035201 ↗
34. Mignuzzi, S. et al. Effect of disorder on Raman scattering of single-layer MoS2. Phys. Rev. B 91, 195411 (2015).10.1103/PhysRevB.91.195411 ↗
35. Battaglia, C. et al. Hole selective MoOx contact for silicon solar cells. Nano Lett. 14, 967–971 (2014).10.1021/nl404389u ↗
36. Li, J. et al. Correlations between percolation threshold, dispersion state, and aspect ratio of carbon nanotubes. Adv. Funct. Mater. 17, 3207–3215 (2007).10.1002/adfm.200700065 ↗
37. Yoon, Y., Ganapathi, K. & Salahuddin, S. How good can monolayer MoS2 transistors be? Nano Lett. 11, 3768–3773 (2011).10.1021/nl2018178 ↗
38. Xu, K. et al. Sub-10 nm nanopattern architecture for 2D material field-effect transistors. Nano Lett. 17, 1065–1070 (2017).10.1021/acs.nanolett.6b04576 ↗
39. Ophus, C. & Ewalds, T. Guidelines for quantitative reconstruction of complex exit waves in HRTEM. Ultramicroscopy 113, 88–95 (2012).10.1016/j.ultramic.2011.10.016 ↗
40. Kolibrik.net. Custom develompent of electronics and software. Kolibrik.net (2017).
41. Doniach, S. & Sunjic, M. Many-electron singularity in X-ray photoemission and X-ray line spectra from metals. J. Phys. C Solid State Phys. 3, 285 (1970).10.1088/0022-3719/3/2/010 ↗