Memristors based on two-dimensional h-BN materials: synthesis, mechanism, optimization and application
Source abstract
Abstract
Memristors offer vast application opportunities in storage, logic devices, and computation due to their nonvolatility, low power consumption, and fast operational speeds. Two-dimensional materials, characterized by their novel mechanisms, ultra-thin channels, high mechanical flexibility, and superior electrical properties, demonstrate immense potential in the domain of high-density, fast, and energy-efficient memristors. Hexagonal boron nitride (h-BN), as a new two-dimensional material, has the characteristics of high thermal conductivity, flexibility, and low power consumption, and has a significant application prospect in the field of memristor. In this paper, the recent research progress of the h-BN memristor is reviewed from the aspects of device fabrication, resistance mechanism, and application prospect.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · 2D Materials and Applications · MXene and MAX Phase Materials
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References (100+)
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