Spin filtering effect in all-van der Waals heterostructures with WSe2 barriers
Source abstract
Abstract
Abstract Exploiting the spin degree of freedom to store and manipulate information provides a paradigm for future microelectronics. The development of van der Waals (vdW) heterostructures has created a fascinating platform for exploring spintronic properties in the two-dimensional (2D) limit. Transition-metal dichalcogenides such as tungsten diselenide (WSe2) have electronic band structures that are ideal for hosting many exotic spin–orbit phenomena. Here, we report the spin-filtering effect in all-vdW heterostructures with WSe2 barrier. Combining 2D-perpendicular magnetic anisotropy Fe3GeTe2 (FGT) with different thicknesses of WSe2, the FGT/WSe2/FGT spin valve shows distinct charge and spin transport behavior. Moreover, the negative magnetoresistance (−4.3%) could be inverted into positive magnetoresistance (up to +25.8%) with decreasing the WSe2 thickness. Furthermore, we proposed a spin-filtering model based on Δ-symmetry electrons tunneling to explain the crossover from negative to positive MR signal through ab initio calculation. These experimental and theoretical results illustrate the rich potential of the families of TMDC materials to control spin currents in 2D spintronic devices.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Graphene research and applications · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (43)
Show source-provided references
1. Liu, Y., Huang, Y. & Duan, X. Van der Waals integration before and beyond two-dimensional materials. Nature 567, 323–333 (2019).10.1038/s41586-019-1013-x ↗
2. Sierra, J. F., Fabian, J., Kawakami, R. K., Roche, S. & Valenzuela, S. O. Van der Waals heterostructures for spintronics and opto-spintronics. Nat. Nanotechnol. 16, 856–868 (2021).10.1038/s41565-021-00936-x ↗
3. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).10.1103/PhysRevLett.105.136805 ↗
4. Zhu, Z. Y., Cheng, Y. C. & Schwingenschlögl, U. Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors. Phys. Rev. B 84, 153402 (2011).10.1103/PhysRevB.84.153402 ↗
5. Dankert, A. & Dash, S. P. Electrical gate control of spin current in van der Waals heterostructures at room temperature. Nat. Commun. 8, 16093 (2017).10.1038/ncomms16093 ↗
6. Yang, L. et al. Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS2 and WS2. Nat. Phys. 11, 830–834 (2015).10.1038/nphys3419 ↗
7. Benítez, L. A. et al. Tunable room-temperature spin galvanic and spin Hall effects in van der Waals heterostructures. Nat. Mater. 19, 170–175 (2020).10.1038/s41563-019-0575-1 ↗
8. Benítez, L. A. et al. Strongly anisotropic spin relaxation in graphene–transition metal dichalcogenide heterostructures at room temperature. Nat. Phys. 14, 303–308 (2018).10.1038/s41567-017-0019-2 ↗
9. Han, W. Perspectives for spintronics in 2D materials. APL Mater. 4, 032401 (2016).10.1063/1.4941712 ↗
10. Zhu, W. et al. Large tunneling magnetoresistance in van der Waals ferromagnet/semiconductor heterojunctions. Adv. Mater. 33, 2104658 (2021).10.1002/adma.202104658 ↗
11. Chen, P. et al. Approaching the intrinsic exciton physics limit in two-dimensional semiconductor diodes. Nature 599, 404–410 (2021).10.1038/s41586-021-03949-7 ↗
12. Wang, S. et al. Room-temperature spin valve effects in La0.67Sr0.33MnO3/Alq3/Co devices. Synth. Met. 161, 1738–1741 (2011).10.1016/j.synthmet.2011.06.017 ↗
13. Fourmental, C. et al. Deep metallic interdiffusion in a model ferromagnetic/molecular system. Phys. Rev. Mater. 3, 083603 (2019).10.1103/PhysRevMaterials.3.083603 ↗
14. Zheng, Y. et al. Magnetoresistance and spinterface of organic spin valves based on diketopyrrolopyrrole polymers. Adv. Electron. Mater. 5, 1900318 (2019).10.1002/aelm.201900318 ↗
15. Gong, C. et al. Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals. Nature 546, 265–269 (2017).10.1038/nature22060 ↗
16. Huang, B. et al. Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit. Nature 546, 270–273 (2017).10.1038/nature22391 ↗
17. Gong, C. & Zhang, X. Two-dimensional magnetic crystals and emergent heterostructure devices. Science 363, eaav4450 (2019).10.1126/science.aav4450 ↗
18. Song, T. et al. Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures. Science 360, 1214–1218 (2018).10.1126/science.aar4851 ↗
19. Wang, Z. et al. Tunneling spin valves based on Fe3GeTe2/hBN/Fe3GeTe2 van der Waals heterostructures. Nano Lett. 18, 4303–4308 (2018).10.1021/acs.nanolett.8b01278 ↗
20. Albarakati, S. et al. Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 trilayer heterostructures. Sci. Adv. 5, eaaw0409 (2019).10.1126/sciadv.aaw0409 ↗
21. Novoselov, K. S., Mishchenko, A., Carvalho, A. & Castro Neto, A. H. 2D materials and van der Waals heterostructures. Science 353, aac9439 (2016).10.1126/science.aac9439 ↗
22. Lin, H. et al. Spin-valve effect in Fe3GeTe2/MoS2/Fe3GeTe2 van der Waals heterostructures. ACS Appl. Mater. Interfaces 12, 43921–43926 (2020).10.1021/acsami.0c12483 ↗
23. Hu, C., Yan, F., Li, Y. & Wang, K. Vertical WS2 spin valve with ohmic property based on Fe3GeTe2 electrodes. Chin. Phys. B 30, 097505 (2021).10.1088/1674-1056/ac078b ↗
24. Klein, D. R. et al. Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling. Science 360, 1218–1222 (2018).10.1126/science.aar3617 ↗
25. Wang, Z. et al. Magnetization dependent tunneling conductance of ferromagnetic barriers. Nat. Commun. 12, 6659 (2021).10.1038/s41467-021-26973-7 ↗
26. Zhang, H. et al. Magnetoresistance in Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions. Phys. Chem. Chem. Phys. 18, 16367–16376 (2016).10.1039/C6CP01866A ↗
27. Zhao, K. et al. Magnetic transport property of NiFe/WSe2/NiFe spin valve structure. J. Magn. Magn. Mater. 432, 10–13 (2017).10.1016/j.jmmm.2017.01.066 ↗
28. Deng, Y. et al. Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2. Nature 563, 94–99 (2018).10.1038/s41586-018-0626-9 ↗
29. Hu, C. et al. From two- to multi-state vertical spin valves without spacer layer based on Fe3GeTe2 van der Waals homo-junctions. Sci. Bull. 65, 1072–1077 (2020).10.1016/j.scib.2020.03.035 ↗
30. Yeh, P.-C. et al. Layer-dependent electronic structure of an atomically heavy two-dimensional dichalcogenide. Phys. Rev. B 91, 041407 (2015).10.1103/PhysRevB.91.041407 ↗
31. Evgeny, Y. T., Oleg, N. M. & Patrick, R. L. Spin-dependent tunnelling in magnetic tunnel junctions. J. Phys.: Condens. Matter 15, R109–R142 (2003).
32. Meng, J., Chen, J.-J., Yan, Y., Yu, D.-P. & Liao, Z.-M. Vertical graphene spin valve with Ohmic contacts. Nanoscale 5, 8894–8898 (2013).10.1039/c3nr03168c ↗
33. Iqbal, M. Z. et al. Spin valve effect of NiFe/graphene/NiFe junctions. Nano Res. 6, 373–380 (2013).10.1007/s12274-013-0314-x ↗
34. Wu, H.-C. et al. Spin-dependent transport properties of Fe3O4/MoS2/Fe3O4 junctions. Sci. Rep. 5, 15984 (2015).10.1038/srep15984 ↗
35. Shang, C. H., Nowak, J., Jansen, R. & Moodera, J. S. Temperature dependence of magnetoresistance and surface magnetization in ferromagnetic tunnel junctions. Phys. Rev. B 58, R2917–R2920 (1998).10.1103/PhysRevB.58.R2917 ↗
36. Wang, W. et al. Spin-valve effect in NiFe/MoS2/NiFe junctions. Nano Lett. 15, 5261–5267 (2015).10.1021/acs.nanolett.5b01553 ↗
37. Wang, X. H. et al. Spin manipulation by giant valley-Zeeman spin-orbit field in atom-thick WSe2. Appl. Phys. Rev. 9, 031402 (2022).10.1063/5.0089162 ↗
38. Zatko, V. et al. Band-structure spin-filtering in vertical spin valves based on chemical vapor deposited WS2. ACS Nano. 13, 14468–14476 (2019).10.1021/acsnano.9b08178 ↗
39. Khan, M. F., Kim, H., Nazir, G., Jung, S. & Eom, J. Layer dependent magnetoresistance of vertical MoS2 magnetic tunnel junctions. Nanoscale 10, 16703–16710 (2018).10.1039/C8NR04518F ↗
40. Dolui, K., Narayan, A., Rungger, I. & Sanvito, S. Efficient spin injection and giant magnetoresistance in Fe/MoS2/Fe junctions. Phys. Rev. B 90, 041401 (2014).10.1103/PhysRevB.90.041401 ↗
41. Smidstrup, S. et al. QuantumATK: an integrated platform of electronic and atomic-scale modelling tools. J. Phys.: Condens. Matter 32, 015901 (2019).
42. Riley, J. M. et al. Direct observation of spin-polarized bulk bands in an inversion-symmetric semiconductor. Nat. Phys. 10, 835–839 (2014).10.1038/nphys3105 ↗
43. Li, X. L. et al. Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes. Nano Lett. 19, 5133–5139 (2019).10.1021/acs.nanolett.9b01506 ↗