Wafer-scale two-dimensional ferromagnetic Fe3GeTe2 thin films grown by molecular beam epitaxy
Source abstract
Abstract
Abstract Recently, layered two-dimensional ferromagnetic materials (2D FMs) have attracted a great deal of interest for developing low-dimensional magnetic and spintronic devices. Mechanically exfoliated 2D FMs were discovered to possess ferromagnetism down to monolayer. It is therefore of great importance to investigate the distinct magnetic properties at low dimensionality. Here, we report the wafer-scale growth of 2D ferromagnetic thin films of Fe3GeTe2 via molecular beam epitaxy, and their exotic magnetic properties can be manipulated via the Fe composition and the interface coupling with antiferromagnetic MnTe. A 2D layer-by-layer growth mode has been achieved by in situ reflection high-energy electron diffraction oscillations, yielding a well-defined interlayer distance of 0.82 nm along {002} surface. The magnetic easy axis is oriented along c-axis with a Curie temperature of 216.4 K. Remarkably, the Curie temperature can be enhanced when raising the Fe composition. Upon coupling with MnTe, the coercive field dramatically increases 50% from 0.65 to 0.94 Tesla. The large-scale layer-by-layer growth and controllable magnetic properties make Fe3GeTe2 a promising candidate for spintronic applications. It also opens up unprecedented opportunities to explore rich physics when coupled with other 2D superconductors and topological matters.
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Research context
OpenAlex topics: 2D Materials and Applications · Iron-based superconductors research · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (49)
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1. Zhang, Y., Tan, Y.-W., Stormer, H. L. & Kim, P. Experimental observation of the quantum Hall effect and Berry’s phase in graphene. Nature 438, 201–204 (2005).10.1038/nature04235 ↗
2. Li, L. et al. Black phosphorus field-effect transistors. Nat. Nanotechnol. 9, 372–377 (2014).10.1038/nnano.2014.35 ↗
3. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011).10.1038/nnano.2010.279 ↗
4. Jones, A. M. et al. Optical generation of excitonic valley coherence in monolayer WSe2. Nat. Nanotechnol. 8, 634–638 (2013).10.1038/nnano.2013.151 ↗
5. Ross, J. S. et al. Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions. Nat. Nanotechnol. 9, 268–272 (2014).10.1038/nnano.2014.26 ↗
6. Wang, Z., Shan, J. & Mak, K. F. Valley- and spin-polarized Landau levels in monolayer WSe2. Nat. Nanotechnol. 12, 144–149 (2016).10.1038/nnano.2016.213 ↗
7. Efetov, D. K. et al. Specular interband Andreev reflections at van der Waals interfaces between graphene and NbSe2. Nat. Phys. 12, 328–332 (2016).10.1038/nphys3583 ↗
8. Yokoya, T. et al. Fermi surface sheet-dependent superconductivity in 2H-NbSe2. Science 294, 2518–2520 (2001).10.1126/science.1065068 ↗
9. Hsu, F.-C. et al. Superconductivity in the PbO-type structure α-FeSe. Proc. Natl Acad. Sci. 105, 14262–14264 (2008).10.1073/pnas.0807325105 ↗
10. Peng, R. et al. Tuning the band structure and superconductivity in single-layer FeSe by interface engineering. Nat. Commun. 5, 5044 (2014).10.1038/ncomms6044 ↗
11. Qing-Yan, W. et al. Interface-Induced high-temperature superconductivity in single unit-cell FeSe films on SrTiO3. Chin. Phys. Lett. 29, 037402 (2012).10.1088/0256-307X/29/3/037402 ↗
12. Park, J.-G. Viewpoint: opportunities and challenges of two-dimensional magnetic van der Waals materials: magnetic graphene? J. Phys. Condens. Matter 28, 301001 (2016).10.1088/0953-8984/28/30/301001 ↗
13. Jongh, L. J. de. Magnetic properties of layered transition metal compounds. in Magnetic Properties of Layered Transition Metal Compounds (ed. Jongh, L. J. de) 1–51 (Springer Netherlands, 1990).
14. Wolf, S. A. et al. Spintronics: a spin-based electronics vision for the future. Science 294, 1488–1495 (2001).10.1126/science.1065389 ↗
15. Žutić, I., Fabian, J. & Das Sarma, S. Spintronics: fundamentals and applications. Rev. Mod. Phys. 76, 323–410 (2004).10.1103/RevModPhys.76.323 ↗
16. Barnaś, J., Fuss, A., Camley, R. E., Grünberg, P. & Zinn, W. Novel magnetoresistance effect in layered magnetic structures: theory and experiment. Phys. Rev. B 42, 8110–8120 (1990).10.1103/PhysRevB.42.8110 ↗
17. Zhang, X. et al. Magnetic anisotropy of the single-crystalline ferromagnetic insulator Cr2Ge2Te6. Jpn. J. Appl. Phys. 55, 033001 (2016).10.7567/JJAP.55.033001 ↗
18. Niu, J. et al. Anomalous Hall effect and magnetic orderings in nano-thick V5S8. ArXiv161100584 Cond-Mat (2016).
19. Zhu, X. et al. Signature of coexistence of superconductivity and ferromagnetism in two-dimensional NbSe2 triggered by surface molecular adsorption. Nat. Commun. 7, 11210 (2016).10.1038/ncomms11210 ↗
20. Zhuang, H. L., Kent, P. R. C. & Hennig, R. G. Strong anisotropy and magnetostriction in the two-dimensional Stoner ferromagnet Fe3GeTe2. Phys. Rev. B 93, 134407 (2016).10.1103/PhysRevB.93.134407 ↗
21. Zhu, J.-X. et al. Electronic correlation and magnetism in the ferromagnetic metal Fe3GeTe2. Phys. Rev. B 93, 144404 (2016).10.1103/PhysRevB.93.144404 ↗
22. Zhuang, H. L., Xie, Y., Kent, P. R. C. & Ganesh, P. Computational discovery of ferromagnetic semiconducting single-layer CrSnTe3. Phys. Rev. B 92, 035407 (2015).10.1103/PhysRevB.92.035407 ↗
23. Siberchicot, B., Jobic, S., Carteaux, V., Gressier, P. & Ouvrard, G. Band structure calculations of ferromagnetic chromium tellurides CrSiTe3 and CrGeTe3. J. Phys. Chem. 100, 5863–5867 (1996).10.1021/jp952188s ↗
24. Li, X. & Yang, J. CrXTe 3 (X = Si, Ge) nanosheets: two dimensional intrinsic ferromagnetic semiconductors. J. Mater. Chem. C 2, 7071–7076 (2014).10.1039/C4TC01193G ↗
25. Chen, B. et al. Magnetic properties of layered itinerant electron ferromagnet Fe3GeTe2. J. Phys. Soc. Jpn. 82, 124711 (2013).10.7566/JPSJ.82.124711 ↗
26. May, A. F., Calder, S., Cantoni, C., Cao, H. & McGuire, M. A. Magnetic structure and phase stability of the van der Waals bonded ferromagnet Fe3-xGeTe2. Phys. Rev. B 93, 014411 (2016).10.1103/PhysRevB.93.014411 ↗
27. Gong, C. et al. Discovery of intrinsic ferromagnetism in 2D van der Waals crystals. ArXiv170305753 Cond-Mat (2017).10.1364/CLEO_AT.2017.JTh5C.2 ↗
28. Huang, B. et al. Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit. ArXiv170305892 Cond-Mat (2017).
29. Yang, S. et al. C3N—A 2D crystalline, hole-free, tunable-narrow-bandgap semiconductor with ferromagnetic properties. Adv. Mater. n/a-n/a (2017). doi:10.1002/adma.201605625.10.1002/adma.201605625 ↗
30. Song, X., Hu, J. & Zeng, H. Two-dimensional semiconductors: recent progress and future perspectives. J. Mater. Chem. C. 1, 2952–2969 (2013).10.1039/c3tc00710c ↗
31. Yu, R. et al. Quantized anomalous hall effect in magnetic topological insulators. Science 329, 61–64 (2010).10.1126/science.1187485 ↗
32. Liu, M. et al. Crossover between weak antilocalization and weak localization in a magnetically doped topological insulator. Phys. Rev. Lett. 108, 036805 (2012).10.1103/PhysRevLett.108.036805 ↗
33. Li, H. et al. The origin of bias independent conductance plateaus and zero bias conductance peaks in Bi2Se3/NbSe2 hybrid structures. ArXiv160707731 Cond-Mat (2016).
34. Hauser, J. J., Theuerer, H. C. & Werthamer, N. R. Proximity effects between superconducting and magnetic films. Phys. Rev. 142, 118–126 (1966).10.1103/PhysRev.142.118 ↗
35. Zhu, Y., Pal, A., Blamire, M. G. & Barber, Z. H. Superconducting exchange coupling between ferromagnets. Nat. Mater. 16, 195–199 (2016).10.1038/nmat4753 ↗
36. León-Brito, N., Bauer, E. D., Ronning, F., Thompson, J. D. & Movshovich, R. Magnetic microstructure and magnetic properties of uniaxial itinerant ferromagnet Fe3GeTe2. J. Appl. Phys. 120, 083903 (2016).10.1063/1.4961592 ↗
37. Sbiaa, R., Law, R., Tan, Ei-Leen. & Liew, T. Spin transfer switching enhancement in perpendicular anisotropy magnetic tunnel junctions with a canted in-plane spin polarizer. J. Appl. Phys. 105, 013910 (2009).10.1063/1.3055373 ↗
38. Sbiaa, R., Meng, H. & Piramanayagam, S. N. Materials with perpendicular magnetic anisotropy for magnetic random access memory. Phys. Status Solidi RRL 5, 413–419 (2011).10.1002/pssr.201105420 ↗
39. Ziqan, A. M., Qasrawi, A. F., Mohammad, A. H. & Gasanly, N. M. Thermally assisted variable range hopping in Tl4S3Se crystal. Bull. Mater. Sci. 38, 593–598 (2015).10.1007/s12034-015-0869-0 ↗
40. Roy, A. et al. Structural and electrical properties of MoTe2 and MoSe2 grown by molecular beam epitaxy. ACS Appl. Mater. Interfaces 8, 7396–7402 (2016).10.1021/acsami.6b00961 ↗
41. Bao, L. et al. Quantum corrections crossover and ferromagnetism in magnetic topological insulators. Sci. Rep. 3, 2391 (2013).10.1038/srep02391 ↗
42. Nagaosa, N., Sinova, J., Onoda, S., MacDonald, A. H. & Ong, N. P. Anomalous hall effect. Rev. Mod. Phys. 82, 1539–1592 (2010).10.1103/RevModPhys.82.1539 ↗
43. Stolichnov, I. et al. Non-volatile ferroelectric control of ferromagnetism in (Ga,Mn)As. Nat. Mater. 7, 464–467 (2008).10.1038/nmat2185 ↗
44. Xiu, F. et al. Electric-field-controlled ferromagnetism in high-Curie-temperature Mn0.05Ge0.95 quantum dots. Nat. Mater. 9, 337–344 (2010).10.1038/nmat2716 ↗
45. Chesnel, K., Wilcken, B., Rytting, M., Kevan, S. D. & Fullerton, E. E. Field mapping and temperature dependence of magnetic domain memory induced by exchange couplings. New J. Phys. 15, 023016 (2013).10.1088/1367-2630/15/2/023016 ↗
46. Kriegner, D. et al. Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe. Nat. Commun. 7, 11623 (2016).10.1038/ncomms11623 ↗
47. Nogués, J. & Schuller, I. K. Exchange bias. J. Magn. Magn. Mater. 192, 203–232 (1999).10.1016/S0304-8853(98)00266-2 ↗
48. Brown, H., Dahlberg, E. D. & Hou, C. Exchange bias measurements of CoFe/IrMn. J. Appl. Phys. 89, 7543–7545 (2001).10.1063/1.1358832 ↗
49. He, Q. L. et al. Tailoring exchange couplings in magnetic topological insulator/antiferromagnet heterostructures. Nat. Mater. 16, 94–100 (2016).10.1038/nmat4783 ↗