Electronics: Irresistible memory
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Abstract
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Neuroscience and Neural Engineering
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References (1)
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1. Lee, M.-J., Lee, C.B., Lee, D., Lee, S. R., Chang, M., Hur, J. H., Kim, Y.-B., Kim, C.-J., Seo, D. H., Seo, S., Chung, U.-I., Yoo, I.-K. Kim, K. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. Nature Mater. 10, 625–630 (2011).10.1038/nmat3070 ↗