Silicon nanowires: Bent to disorder
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Research context
OpenAlex topics: Nanowire Synthesis and Applications · Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and interfaces
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References (1)
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1. Wang, L., Zheng, K., Zhang, Z. & Han, X. Direct atomic-scale imaging about the mechanisms of ultralarge bent straining in Si nanowires. Nano Lett. 11, 2382–7092 (2011).10.1021/nl200735p ↗