Enhancing the interfacial perpendicular magnetic anisotropy and tunnel magnetoresistance by inserting an ultrathin LiF layer at an Fe/MgO interface
Source abstract
Abstract
Abstract Perpendicular magnetic anisotropy (PMA) is becoming increasingly important in spintronics research, especially for high-density magnetoresistive random access memories (MRAMs). The PMA induced at an Fe/MgO interface is widely used in magnetic tunnel junctions. Here, we propose inserting an ultrathin LiF layer at the interface in an epitaxial Fe/MgO junction. With a 0.3 nm-thick LiF layer, a large intrinsic interface PMA energy, Ki,0, of 2.8 mJ/m2 was achieved. We also found that the LiF/MgO bilayer tunneling barrier exhibited a large tunnel magnetoresistance (TMR) effect, suggesting that a coherent spin-dependent tunneling process was maintained in the ultrathin LiF layer. Atomic-scale interface engineering using fluoride can further improve the PMA and TMR properties of spintronic devices.
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Research context
OpenAlex topics: Magnetic properties of thin films · ZnO doping and properties · Magnetic Properties and Synthesis of Ferrites
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (31)
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