DataVXNPG Asia MaterialsPaper
journal article·2020-12Open access

Enhanced analog synaptic behavior of SiNx/a-Si bilayer memristors through Ge implantation

Keonhee Kim, Soojin Park, Su Man Hu, Jonghan Song, Weoncheol Lim, Yeonjoo Jeong, Jaewook Kim, Suyoun Lee, Joon Young Kwak, Jongkil Park, Jong Keuk Park, Byeong-Kwon Ju, Doo Seok Jeong, Inho Kim

NPG Asia Materials· Volume 12· Issue 1
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Abstract

Abstract Conductive bridging random access memory (CBRAM) has been considered to be a promising emerging device for artificial synapses in neuromorphic computing systems. Good analog synaptic behaviors, such as linear and symmetric synapse updates, are desirable to provide high learning accuracy. Although numerous efforts have been made to develop analog CBRAM for years, the stochastic and abrupt formation of conductive filaments hinders its adoption. In this study, we propose a novel approach to enhance the synaptic behavior of a SiNx/a-Si bilayer memristor through Ge implantation. The SiNx and a-Si layers serve as switching and internal current limiting layers, respectively. Ge implantation induces structural defects in the bulk and surface regions of the a-Si layer, enabling spatially uniform Ag migration and nanocluster formation in the upper SiNx layer and increasing the conductance of the a-Si layer. As a result, the analog synaptic behavior of the SiNx/a-Si bilayer memristor, such as the nonlinearity, on/off ratio, and retention time, is remarkably improved. An artificial neural network simulation shows that the neuromorphic system with the implanted SiNx/a-Si memristor provides a 91.3% learning accuracy mainly due to the improved linearity.
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Research context

NanomaterialsBiomaterials

OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Photoreceptor and optogenetics research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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