Metal–organic frameworks: The future of low-κ materials

The rapid development of ultra-large-scale integration and the continuous miniaturization of integrated circuits toward the nanoscale require ultra-low dielectric constant ( κ ) materials to replace the traditional SiO 2 ( κ =3.9). Because air or a vacuum has the lowest dielectric constant ( κ =1), the partial replacement of solid materials with a vacuum represents a potential route for the development of the new low- κ materials required for future electronics. 1 Porous materials, particularly metal–organic frameworks (MOFs), can be utilized as future low- κ materials. As new low- κ materials, MOFs promise a next generation of dielectric materials for extremely stable, cheap, and mechanically flexible microelectronics devices.