Extremely anisotropic single-crystal growth in nanotwinned copper
Source abstract
Abstract
By electroplating the unidirectionally <111>-oriented nanotwinned and fine-grained Cu on a Si wafer surface and followed by annealing at 400–500 °C up to an hour, we grow a number of extremely large <100>-oriented single crystals of Cu of sizes from 200 to 400 μm, as illustrated by the left figure. By patterning the nanotwinned Cu film (middle figure), we grow an array of <100>-oriented single crystals of Cu of sizes from 25 to 100 μm on Si after the annealing, as shown in the right figure.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Copper Interconnects and Reliability · Electronic Packaging and Soldering Technologies · Microstructure and mechanical properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (23)
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