The use of Raman Spectroscopy for Characterisation of Ceramic Dielectrics

Abstract Al2O3 doped with Ti02 at levels up to 5 wt% is characterised using Raman spectroscopy. Aluminium titanate (A12TiO5) is detected in the grain interiors at doping levels as low as 0.15 wt%. A grain boundary phase is identified. where the concentration of Al2TiO5, is much higher than in the grain interior. The Raman mapping technique is demonstrated by acquiring spectra in a grid formation in the region of a grain boundary phase. and obtaining an indication of the Al2TiO5 concentration at each point. Further applications of the technique are discussed.