MICROSTRUCTURE AND ELECTRICAL PROPERTIES OF TITANIUM DOPED GRAPHITE

Microstructure and electrical properties of titanium doped graphite were investigated in order to discuss the effects of titanium dopant on the doped graphite. Results show that the doped graphite demonstrates characteristics of high density, high graphitization degree and much lower electrical resistivity than pure graphite produced by same process. Microstructure analysis reveals that titanium dopant severs as a catalyst to accelerate the graphitization of carbon substrate, and the graphitization degree shows a strong dependence on titanium concentration in the doped graphite. For the doped graphite with titanium concentration of 11 W/%, its electrical resistivity is as low as 2.10 μΩm and graphitization degree reaches 100 %. Composition analysis indicates that titanium added to the carbon substrate is in form of TiC precipitates and a small amount of titanium has been depleted out of the doped graphite, which will result in the formation of cavities. To develop titanium doped graphite with high performance, titanium concentration and preparation process should be optimized.