journal article·2023-03-24

Schottky Junction Made from a Nanoporous Au and TiO2 Film for Plasmonic Photodetectors

Bingwu Liu, Xing Xu, Mei Han, Huan Cheng, Jiamei Chen, Xuguang Sun, Qinglin Zhang, Xidong Duan, Jiawen Hu

ACS Applied Nano Materials· Volume 6· Issue 6
Publisher page

Abstract

The generation, transfer, and collection of plasmon-derived hot electrons represent a distinctive pathway for the utilization of solar energy. Herein, we report the construction of a plasmonic photodetector from a metal/TiO 2 Schottky junction, featuring using a solution-processed continuous nanoporous Au film (CNAuF) as the light absorption layer and an n-type TiO 2 film as the electron acceptation layer. Because of its plasmon properties, the CNAuF can absorb broadband light in the visible region and in turn creates abundant hot electrons (via the decay of its plasmon). Using a CNAuF/TiO 2 Schottky junction, these hot electrons can be collected into the TiO 2 film to generate a steady-state photocurrent. As a result, the plasmonic photodetector constructed from the CNAuF/TiO 2 Schottky junction delivers an appreciable photoresponse to visible light. Taking the photoresponse to 532 nm light as an example, this plasmonic photodetector delivers a high responsivity of 0.06 A/W, a specific detectivity of 3.9 × 10 9 Jones, and an external quantum efficiency of 13.8%, with a rise time and a decay time being 110 and 120 ms, respectively. The bottom-up nature of the solution-processed strategy offers great flexibility to tune the plasmonic nanostructure and in turn its optical properties, thereby creating many possibilities for the creation of next-generation plasmonic photoelectric devices and beyond.
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Research context

OpenAlex topics: Gold and Silver Nanoparticles Synthesis and Applications · Copper-based nanomaterials and applications · Quantum Dots Synthesis And Properties

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Affiliations

Hunan Key Laboratory of Two-Dimensional Materials, Advanced Catalytic Engineering Research Center of the Ministry of Education, and College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China

College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China

Funding

National Natural Science Foundation of China

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