journal article·2022-10-28Open access

First-Principles Study of the Phonon Lifetime and Low Lattice Thermal Conductivity of Monolayer γ-GeSe: A Comparative Study

Bowen Wang, Xuefei Yan, Xiangyue Cui, Yongqing Cai

ACS Applied Nano Materials· Volume 5· Issue 10

Abstract

Germanium selenide (GeSe) is a unique two-dimensional (2D) material showing various polymorphs stable at ambient condition. Recently, a new phase with a layered hexagonal lattice ({\gamma}-GeSe) was synthesized with ambient stability and extraordinary electronic conductivity even higher than graphite while its monolayer is semiconducting. In this work, via using first-principles derived force constants and Boltzmann transport theory we explore the lattice thermal conductivity ({\kappa}_l) of the monolayer {\gamma}-GeSe, together with a comparison with monolayer {\alpha}-GeSe and {\beta}-GeSe. The {\kappa}_l of {\gamma}-phase is relatively low (5.50 W/mK), comparable with those of {\alpha}- and {\beta}- phases. The acoustic branches in {\alpha}-GeSe are well separated from the optical branches, limiting scattering channels in the phase space, while for \b{eta}-GeSe and {\gamma}-GeSe the acoustic branches are resonant with the low-frequency optical branches facilitating more phonon-phonon scattering. For {\gamma}-GeSe, the cumulative {\kappa}_l is isotropic and phononic representative mean free path (rMFP) is the shortest (17.07 nm) amongst the three polymorphs, indicating that the {\kappa}_l of the {\gamma} phase is less likely to be affected by the size of the sample, while for {\alpha}-GeSe the cumulative {\kappa}_l grows slowly with mean free path and the rMFP is longer (up to 20.56 and 35.94 nm along zigzag and armchair direction, respectively), showing a stronger size-dependence of {\kappa}_l. Our work suggests that GeSe polymorphs with overall low thermal conductivity are promising contenders for thermoelectric and thermal management applications.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal properties of materials · 2D Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau, China

School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai519082, China

Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, Sun Yat-sen University, Zhuhai519082, China

Funding

Universidade de Macau · Fundo para o Desenvolvimento das Ci?ncias e da Tecnologia · National Natural Science Foundation of China · Natural Science Foundation of Guangdong Province

References (58)

Show source-provided references
1. 10.1002/aelm.20190081810.1002/aelm.201900818 ↗
2. 10.1002/adfm.20180380710.1002/adfm.201803807 ↗
3. 10.1039/C8CS00254A10.1039/C8CS00254A ↗
4. 10.1002/advs.20210292410.1002/advs.202102924 ↗
5. 10.1088/1361-6528/ac622d10.1088/1361-6528/ac622d ↗
6. 10.3866/PKU.WHXB20210801710.3866/PKU.WHXB202108017 ↗
7. 10.1002/advs.20200165510.1002/advs.202001655 ↗
8. 10.1088/1361-6528/ab07d910.1088/1361-6528/ab07d9 ↗
9. 10.1002/advs.20180047810.1002/advs.201800478 ↗
10. 10.1039/C8NR09836K10.1039/C8NR09836K ↗
11. 10.1021/acsami.9b0642510.1021/acsami.9b06425 ↗
12. 10.1038/nature1318410.1038/nature13184 ↗
13. 10.1126/science.aad860910.1126/science.aad8609 ↗
14. 10.1038/ncomms1371310.1038/ncomms13713 ↗
15. 10.1021/acs.nanolett.9b0141910.1021/acs.nanolett.9b01419 ↗
16. 10.1063/1.471470510.1063/1.4714705 ↗
17. 10.1126/sciadv.aay283010.1126/sciadv.aay2830 ↗
18. 10.1063/1.489123010.1063/1.4891230 ↗
19. 10.1039/C6NR01349J10.1039/C6NR01349J ↗
20. 10.1039/C5NR03813H10.1039/C5NR03813H ↗
21. 10.1038/s41598-017-00598-710.1038/s41598-017-00598-7 ↗
22. 10.1021/jacs.6b1282810.1021/jacs.6b12828 ↗
23. 10.1002/adfm.20200053310.1002/adfm.202000533 ↗
24. 10.1021/acs.nanolett.1c0071410.1021/acs.nanolett.1c00714 ↗
25. 10.1002/cssc.20220056410.1002/cssc.202200564 ↗
26. 10.1103/PhysRevB.50.1795310.1103/PhysRevB.50.17953 ↗
27. 10.1103/PhysRevB.54.1116910.1103/PhysRevB.54.11169 ↗
28. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
29. 10.1103/PhysRevB.85.19543610.1103/PhysRevB.85.195436 ↗
30. 10.1103/PhysRevB.86.17430710.1103/PhysRevB.86.174307 ↗
31. 10.1016/j.cpc.2014.02.01510.1016/j.cpc.2014.02.015 ↗
32. 10.1103/PhysRevB.88.04543010.1103/PhysRevB.88.045430 ↗
33. 10.1103/PhysRevB.81.08520510.1103/PhysRevB.81.085205 ↗
34. 10.1103/PhysRevB.80.12520310.1103/PhysRevB.80.125203 ↗
35. 10.1103/PhysRevB.53.906410.1103/PhysRevB.53.9064 ↗
36. 10.1088/0953-8984/20/16/16520910.1088/0953-8984/20/16/165209 ↗
37. 10.1103/PhysRevB.84.12542610.1103/PhysRevB.84.125426 ↗
38. 10.1103/PhysRevB.27.85810.1103/PhysRevB.27.858 ↗
39. 10.1088/2053-1583/ac83d510.1088/2053-1583/ac83d5 ↗
40. 10.1039/C5RA19747C10.1039/C5RA19747C ↗
41. 10.1039/C7NR00838D10.1039/C7NR00838D ↗
42. 10.1021/acs.nanolett.6b0131110.1021/acs.nanolett.6b01311 ↗
43. 10.1103/PhysRevB.89.15542610.1103/PhysRevB.89.155426 ↗
44. 10.1039/C5NR08231E10.1039/C5NR08231E ↗
45. 10.1021/jp507935710.1021/jp5079357 ↗
46. 10.1063/1.489668510.1063/1.4896685 ↗
47. 10.1007/s10948-015-3305-110.1007/s10948-015-3305-1 ↗
48. 10.1103/PhysRevB.90.21430210.1103/PhysRevB.90.214302 ↗
49. 10.1103/PhysRevB.84.15542110.1103/PhysRevB.84.155421 ↗
50. 10.1103/PhysRevB.96.16120110.1103/PhysRevB.96.161201 ↗
51. 10.1103/PhysRevB.100.24520310.1103/PhysRevB.100.245203 ↗
52. 10.1063/1.494282710.1063/1.4942827 ↗
53. 10.1103/PhysRevB.105.12540610.1103/PhysRevB.105.125406 ↗
54. 10.1103/PhysRevLett.107.09590110.1103/PhysRevLett.107.095901 ↗
55. 10.1038/ncomms263010.1038/ncomms2630 ↗
56. 10.1021/acsomega.7b0136410.1021/acsomega.7b01364 ↗
57. 10.1016/j.jmat.2016.09.00110.1016/j.jmat.2016.09.001 ↗
58. 10.1103/PhysRevB.89.03543810.1103/PhysRevB.89.035438 ↗