Correction: Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

Sreetosh Goswami; Adam J. Matula; Santi P. Rath; Svante Hedström; Surajit Saha; Meenakshi Annamalai; Debabrata Sengupta; Abhijeet Patra; Siddhartha Ghosh; Hariom Jani; Soumya Sarkar; Mallikarjuna Rao Motapothula; Christian A. Nijhuis; Jens Martin; Sreebrata Goswami; Victor S. Batista; T. Venkatesan

doi:10.1038/nmat5059

journal article·2018-01-01Open access

Correction: Corrigendum: Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

Sreetosh Goswami, Adam J. Matula, Santi P. Rath, Svante Hedström, Surajit Saha, Meenakshi Annamalai, Debabrata Sengupta, Abhijeet Patra, Siddhartha Ghosh, Hariom Jani, Soumya Sarkar, Mallikarjuna Rao Motapothula, Christian A. Nijhuis, Jens Martin, Sreebrata Goswami, Victor S. Batista, T. Venkatesan

Nature Materials· Volume 17· Issue 1

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Source abstract

Abstract

This corrects the article DOI: 10.1038/nmat5009.

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Source: europepmc · Quality: needs review · Source record ↗
Source flags: short_text

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Photoreceptor and optogenetics research · Transition Metal Oxide Nanomaterials

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References (1)

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1. Nature Materials · 2017 · 16 · 121610.1038/nmat5009 ↗