Silicon goes heavyweight
Source abstract
Abstract
A substantial spin–orbit interaction is introduced in a purely silicon heterostructure and can be tuned through an applied gate voltage.
The source flagged this abstract for review. Check formulas and completeness against the original publication.
Source: openaire · Quality: needs review · Source record ↗
Source flags: short_text
Source flags: short_text
Research context
OpenAlex topics: Quantum and electron transport phenomena · Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (6)
Show source-provided references
1. Lee, S. et al. Nat. Mater. https://doi.org/10.1038/s41563-021-01026-y (2021).10.1038/s41563-021-01026-y ↗
2. Datta, S. Nat. Electron. 1, 604 (2018).10.1038/s41928-018-0163-4 ↗
3. Datta, S. & Das, B. Appl. Phys. Lett. 56, 665 (1990).10.1063/1.102730 ↗
4. Koo, H. C. et al. Science 325, 1515–1518 (2009).10.1126/science.1173667 ↗
5. Park, Y. H. et al. Sci. Rep. 7, 46671 (2017).10.1038/srep46671 ↗
6. Jansen, R. Nat. Mater. 11, 400–408 (2012).10.1038/nmat3293 ↗