DataVXNature MaterialsPaper
journal article·2026-08

A nitride-based non-volatile memory enabled by electric-field-induced phase transition

Tao Zeng, Zhongran Liu, Youdi Gu, Bingjie Dang, Yuan Gao, Tianlong Xu, Peng Li, Shu Shi, Kaixuan Sun, Yao Zhu, Xiao Gong, He Tian, Jingsheng Chen

Nature Materials· Volume 25· Issue 8
Publisher page
Source abstract

Abstract

Non-volatile memory technology holds great promise for data storage and near-memory or in-memory computing. However, significant challenges remain, including programming latency, energy consumption, stability and endurance of the storage medium. Here we report an Al0.7Sc0.3N-based non-volatile memory device that exhibits outstanding performance, including ultralow switching voltage (<0.3 V), ultrafast write speed (<3 ns) and ultralow energy consumption (<150 fJ bit-1). In particular, the device demonstrates exceptional stability and reliability, achieving a write endurance exceeding 108 cycles at 583 K with minimal cycle-to-cycle and device-to-device variations. In situ scanning transmission electron microscopy analysis reveals that resistance switching is driven by an electric-field-induced phase transition between the wurtzite (high-resistance) and rocksalt (low-resistance) phases of Al0.7Sc0.3N. These results underscore the potential of electric-field-induced phase transition memory as a next-generation non-volatile memory solution, offering high speed, low power consumption and exceptional reliability-even under high temperatures-making it well suited for high-density data storage and advanced computing applications.
Source: europepmc · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Advanced Memory and Neural Computing · 2D Materials and Applications · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (53)

Show source-provided references
1. Huang, J. et al. A four-megabit compute-in-memory macro with eight-bit precision based on CMOS and resistive random-access memory for AI edge devices. Nat. Electron. 5, 173–195 (2020).
2. Wang, Z. et al. Resistive switching materials for information processing. Nat. Rev. Mater. 5, 173–195 (2020).10.1038/s41578-019-0159-3 ↗
3. Wang, Z. et al. Toward a generalized Bienenstock-Cooper-Munro rule for spatiotemporal learning via triplet-STDP in memristive devices. Nat. Commun. 11, 1510 (2020).10.1038/s41467-020-15158-3 ↗
4. Yang, J., Strukov, D. & Stewart, D. Memristive devices for computing. Nat. Nanotechnol. 8, 13–24 (2013).10.1038/nnano.2012.240 ↗
5. Zhang, W. et al. Neuro-inspired computing chips. Nat. Electron. 3, 371–382 (2020).10.1038/s41928-020-0435-7 ↗
6. Khwa, W. S. et al. A mixed-precision memristor and SRAM compute-in-memory AI processor. Nature 639, 617–623 (2025).10.1038/s41586-025-08639-2 ↗
7. Zidan, M., Strachan, J. & Lu, W. The future of electronics based on memristive systems. Nat. Electron. 1, 22–29 (2019).10.1038/s41928-017-0006-8 ↗
8. Ielmini, D. & Wong, H.-S. P. In-memory computing with resistive switching devices. Nat. Electron. 1, 333–343 (2018).10.1038/s41928-018-0092-2 ↗
9. Jung, S. et al. A crossbar array of magnetoresistive memory devices for in-memory computing. Nature 601, 211–216 (2022).10.1038/s41586-021-04196-6 ↗
10. Kim, K. H. et al. Wurtzite and fluorite ferroelectric materials for electronic memory. Nat. Nanotechnol. 18, 422–441 (2023).10.1038/s41565-023-01361-y ↗
11. Park, S. O. et al. Phase-change memory via a phase-changeable self-confined nano-filament. Nature 628, 293–298 (2024).10.1038/s41586-024-07230-5 ↗
12. Wan, W. et al. A compute-in-memory chip based on resistive random-access memory. Nature 608, 504–512 (2022).10.1038/s41586-022-04992-8 ↗
13. Kent, A. & Worledge, D. A new spin on magnetic memories. Nat. Nanotechnol. 10, 187–191 (2015).10.1038/nnano.2015.24 ↗
14. Nguyen, V. et al. Recent progress in spin-orbit torque magnetic random-access memory. npj Spintronics 2, 48 (2024).10.1038/s44306-024-00044-1 ↗
15. Feng, G. et al. A ferroelectric fin diode for robust non-volatile memory. Nat. Commun. 15, 513 (2024).10.1038/s41467-024-44759-5 ↗
16. Khan, A., Keshavarzi, A. & Datta, S. The future of ferroelectric field-effect transistor technology. Nat. Electron. 3, 588–597 (2020).10.1038/s41928-020-00492-7 ↗
17. Zhang, W. et al. Designing crystallization in phase-change materials for universal memory and neuro-inspired computing. Nat. Rev. Mater. 4, 150–168 (2019).10.1038/s41578-018-0076-x ↗
18. Milliron, D., Raoux, S., Shelby, R. & Jordan-Sweet, J. Solution-phase deposition and nanopatterning of GeSbSe phase-change materials. Nat. Mater. 6, 352–356 (2007).10.1038/nmat1887 ↗
19. Fantini, A., Gorine, G., Degraeve, R. et al. Intrinsic program instability in HfO2 RRAM and consequences on program algorithms. In 2015 IEEE International Electron Devices Meeting (IEDM) 751–754 (IEEE, 2015).10.1109/IEDM.2015.7409648 ↗
20. Aswathy, N. & Sivamangai, N. Future nonvolatile memory technologies: challenges and applications. In 2021 2nd International Conference on Advances in Computing, Communication, Embedded and Secure Systems (ACCESS) 308–312 (IEEE, 2021).10.1109/ACCESS51619.2021.9563288 ↗
21. Pradhan, D. et al. Materials for high-temperature digital electronics. Nat. Rev. Mater. 9, 790–807 (2024).10.1038/s41578-024-00731-9 ↗
22. Park, J. et al. Multi-level, forming and filament free, bulk switching trilayer RRAM for neuromorphic computing at the edge. Nat. Commun. 15, 3492 (2024).10.1038/s41467-024-46682-1 ↗
23. Park, S.-O. et al. High-speed and low-energy nitride memristors. Adv. Funct. Mater. 26, 5290–5296 (2016).10.1002/adfm.201600680 ↗
24. Chang, M. et al. A high-speed 7.2-ns read-write random access 4-Mb embedded Resistive RAM (ReRAM) macro using process-variation-tolerant current-mode read schemes. IEEE J. Solid-State Circuits 48, 878–891 (2012).10.1109/JSSC.2012.2230515 ↗
25. Loke, D. et al. Breaking the speed limits of phase-change memory. Science 336, 1566–1569 (2012).10.1126/science.1221561 ↗
26. Ren, S. et al. Pt/Al2O3/TaOx/Ta self-rectifying memristor with record-low operation current (<2 pA), low power (fJ), and high scalability. IEEE T. Electron Dev. 69, 838–842 (2022).10.1109/TED.2021.3134137 ↗
27. Xiong, F. et al. Towards ultimate scaling limits of phase-change memory. In 2016 IEEE International Electron Devices Meeting (IEDM) 79–82 (IEEE, 2016).10.1109/IEDM.2016.7838342 ↗
28. SM28VLT32-HT–32-Mbit high-temp flash memory with serial peripheral interface (SPI) bus. Texas Instruments https://www.ti.com/product/SM28VLT32-HT (accessed 3 April 2026).
29. Lee, P. et al. 33.1 A 16 nm 32 Mb embedded STT-MRAM with a 6 ns read-access time, a 1M-cycle write endurance, 20-year retention at 150 °C and MTJ-OTP solutions for magnetic immunity. In 2013 IEEE International Solid-State Circuits Conference (ISSCC) 494–496 (IEEE, 2013).10.1109/ISSCC42615.2023.10067837 ↗
30. Kluge, J. et al. High operating temperature reliability of optimized Ge-rich GST wall PCM devices. In IEEE 8th International Memory Workshop (IMW) 1–4 (IEEE, 2016).10.1109/IMW.2016.7495273 ↗
31. Pradhan, D. et al. A scalable ferroelectric non-volatile memory operating at 600 °C. Nat. Electron. 7, 348–355 (2024).10.1038/s41928-024-01148-6 ↗
32. Butcher, B. et al. High endurance performance of 1T1R HfOx-based RRAM at low (<20 μA) operative current and elevated (150 °C) temperature. In 2011 IEEE International Integrated Reliability Workshop Final Report 146–150 (IEEE, 2011).10.1109/IIRW.2011.6142611 ↗
33. Shang, J. et al. Thermally stable transparent resistive random access memory based on all-oxide heterostructures. Adv. Funct. Mater. 24, 2171–2179 (2013).10.1002/adfm.201303274 ↗
34. Zhang, Z. et al. All-metal-nitride RRAM devices. IEEE Electron Device Lett. 36, 29–31 (2015).10.1109/LED.2014.2367542 ↗
35. Satoh, S., Ohtaka, K., Shimatsu, T. & Tanaka, H. Crystal structure deformation and phase transition of AlScN thin films in whole Sc concentration range. J. Appl. Phys. 132, 025103 (2022).10.1063/5.0087505 ↗
36. Wu, D. et al. Atomic origins of leakage paths in epitaxial Al1–xScxN thin films. Nano Lett. 25, 14371–14376 (2025).10.1021/acs.nanolett.5c03675 ↗
37. Ponce, F. & Bour, D. Nitride-based semiconductors for blue and green light-emitting devices. Nature 386, 351–359 (1997).10.1038/386351a0 ↗
38. Biswas, B. & Saha, B. Development of semiconducting ScN. Phys. Rev. Mater. 3, 020301 (2019).10.1103/PhysRevMaterials.3.020301 ↗
39. Porte, L. Stoichiometric ScN and nitrogen deficient scandium nitride layers studied by photoelectron spectroscopy. J. Phys. C: Solid State Phys. 18, 6701 (1985).10.1088/0022-3719/18/36/024 ↗
40. Deng, R. et al. Optical and transport measurement and first-principles determination of the ScN band gap. Phys. Rev. B 91, 045104 (2015).10.1103/PhysRevB.91.045104 ↗
41. Hou, W. et al. Strain engineering of vertical molybdenum ditelluride phase-change memristors. Nat. Electron. 7, 8–16 (2024).10.1038/s41928-023-01071-2 ↗
42. Rathi, S. et al. Correlation between thermal annealing temperature and Joule-heating based insulator-metal transition in VO2 nanobeams. Appl. Phys. Lett. 103, 203114 (2013).10.1063/1.4831995 ↗
43. Wysocki, J., Adams, J. & Haas, W. Electric-field-induced phase change in cholesteric liquid crystals. Phys. Rev. Lett. 20, 1024–1026 (1968).10.1103/PhysRevLett.20.1024 ↗
44. Uenuma, M., Ishikawa, K. & Uraoka, Y. Joule heating effect in nonpolar and bipolar resistive random access memory. Appl. Phys. Lett. 107, 073503 (2015).10.1063/1.4928661 ↗
45. Talley, K. et al. Implications of heterostructural alloying for enhanced piezoelectric performance of (Al,Sc)N. Phys. Rev. Mater. 2, 063802 (2018).10.1103/PhysRevMaterials.2.063802 ↗
46. Zhang, X., Stach, E., Meng, W. & Meng, A. Nanoscale compositional segregation in epitaxial AlScN on Si (111). Nanoscale Horiz. 8, 674–684 (2023).10.1039/D2NH00567K ↗
47. Schuster, J. & Bauer, J. The ternary systems Sc-Al-N and Y-Al-N. J. Less Common Met. 109, 345–350 (1985).10.1016/0022-5088(85)90066-9 ↗
48. Österlund, E. et al. Stability and residual stresses of sputtered wurtzite AlScN thin films. Phys. Rev. Mater. 5, 035001 (2021).10.1103/PhysRevMaterials.5.035001 ↗
49. Boulfelfel, S., Zahn, D., Grin, Y. & Leoni, S. Walking the path from B4- to B1-type structures in GaN. Phys. Rev. Lett. 99, 125505 (2007).10.1103/PhysRevLett.99.125505 ↗
50. Kwon, D. et al. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. Nat. Nanotechnol. 5, 148–153 (2010).10.1038/nnano.2009.456 ↗
51. Kim, K.-H. et al. Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors. Nat. Nanotechnol. 18, 1044–1050 (2023).10.1038/s41565-023-01399-y ↗
52. Skidmore, C. et al. Proximity ferroelectricity in wurtzite heterostructures. Nature 637, 574–579 (2025).10.1038/s41586-024-08295-y ↗
53. Calderon, S. et al. Atomic-scale polarization switching in wurtzite ferroelectrics. Science 380, 1034–1038 (2023).10.1126/science.adh7670 ↗