Switching by topological insulators
Source abstract
Abstract
Magnetization in magnetoresistive memory devices can be controlled at room temperature by spin–orbit torques originating from the surface states of topological insulators.
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Source: openaire · Quality: needs review · Source record ↗
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Source flags: short_text
Research context
OpenAlex topics: Magnetic properties of thin films · Topological Materials and Phenomena · Advanced Memory and Neural Computing
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References (8)
Show source-provided references
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