Amorphous phase-change memory alloy with no resistance drift
Source abstract
Abstract
Abstract Spontaneous structural relaxation is intrinsic to glassy materials due to their metastable nature. For phase-change materials, the resultant temporal change in electrical resistance seriously hampers neuromorphic computing applications. Here we report an ab-initio-calculation-informed design of amorphous phase-change materials composed of robust ‘molecule-like’ motifs, depriving the amorphous alloy of critical structural ingredients responsible for relaxation and, hence, resistance drift. We demonstrate amorphous CrTe 3 thin films that display practically no resistance drift at any working temperature from −200 °C to 165 °C, and highlight the multilevel encoding ability via a hybrid opto-electronic approach. We further reveal that the same no-drift behaviour holds for melt-quenched amorphous CrTe 3 in electronic devices. Moreover, the application potential of CrTe 3 is testified by its incorporation in a vehicle with an automatic path-tracking function. Our work provides an alternative route to achieve requisite properties for potential phase-change neuromorphic computing via the judicious design of disordered phase-change materials.
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (55)
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