Magneto-ionic control of magnetism using a solid-state proton pump
Source abstract
Abstract
Voltage-gated ion transport as a means of manipulating magnetism electrically could enable ultralow-power memory, logic and sensor technologies. Earlier work made use of electric-field-driven O2- displacement to modulate magnetism in thin films by controlling interfacial or bulk oxidation states. However, elevated temperatures are required and chemical and structural changes lead to irreversibility and device degradation. Here we show reversible and non-destructive toggling of magnetic anisotropy at room temperature using a small gate voltage through H+ pumping in all-solid-state heterostructures. We achieve 90° magnetization switching by H+ insertion at a Co/GdOx interface, with no degradation in magnetic properties after >2,000 cycles. We then demonstrate reversible anisotropy gating by hydrogen loading in Pd/Co/Pd heterostructures, making metal-metal interfaces susceptible to voltage control. The hydrogen storage metals Pd and Pt are high spin-orbit coupling materials commonly used to generate perpendicular magnetic anisotropy, Dzyaloshinskii-Moriya interaction, and spin-orbit torques in ferromagnet/heavy-metal heterostructures. Thus, our work provides a platform for voltage-controlled spin-orbitronics.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Magnetic and transport properties of perovskites and related materials · Electrocatalysts for Energy Conversion
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (50)
Show source-provided references
1. Duan, C. G. et al. Surface magnetoelectric effect in ferromagnetic metal films. Phys. Rev. Lett. 101, 137201 (2008).10.1103/PhysRevLett.101.137201 ↗
2. Tsujikawa, M. & Oda, T. Finite electric field effects in the large perpendicular magnetic anisotropy surface Pt/Fe/Pt(001): a first-principles study. Phys. Rev. Lett. 102, 247203 (2009).10.1103/PhysRevLett.102.247203 ↗
3. Niranjan, M. K., Duan, C. G., Jaswal, S. S. & Tsymbal, E. Y. Electric field effect on magnetization at the Fe/MgO(001) interface. Appl. Phys. Lett. 96, 107–110 (2010).10.1063/1.3443658 ↗
4. Maruyama, T. et al. Large voltage-induced magnetic anisotropy change in a few atomic layers of iron. Nat. Nanotech. 4, 158–161 (2009).
5. Shiota, Y. et al. Voltage-assisted magnetization switching in ultrathin Fe80Co20 alloy layers. Appl. Phys. Express 2, 063001 (2009).10.1143/APEX.2.063001 ↗
6. Bauer, U., Emori, S. & Beach, G. S. D. Voltage-controlled domain wall traps in ferromagnetic nanowires. Nat. Nanotech. 8, 411–416 (2013).
7. Bauer, U. et al. Magneto-ionic control of interfacial magnetism. Nat. Mater. 14, 174–181 (2014).10.1038/nmat4134 ↗
8. Bi, C. et al. Reversible control of Co magnetism by voltage-induced oxidation. Phys. Rev. Lett. 113, 267202 (2014).10.1103/PhysRevLett.113.267202 ↗
9. Li, H. B. et al. Electric-field control of ferromagnetism through oxygen ion gating. Nat. Commun. 8, 2156 (2017).10.1038/s41467-017-02359-6 ↗
10. Gilbert, D. A. et al. Structural and magnetic depth profiles of magneto-ionic heterostructures beyond the interface limit. Nat. Commun. 7, 12264 (2016).10.1038/ncomms12264 ↗
11. Gilbert, D. A. et al. Controllable positive exchange bias via redox-driven oxygen migration. Nat. Commun. 7, 11050 (2016).10.1038/ncomms11050 ↗
12. Grutter, A. J. et al. Reversible control of magnetism in La0.67Sr0.33MnO3 through chemically-induced oxygen migration. Appl. Phys. Lett. 108, 82405 (2016).10.1063/1.4942645 ↗
13. Lu, N. et al. Electric-field control of tri-state phase transformation with a selective dual-ion switch. Nature 546, 124–128 (2017).10.1038/nature22389 ↗
14. Di, N. et al. Influence of controlled surface oxidation on the magnetic anisotropy of Co ultrathin films. Appl. Phys. Lett. 106, 122405 (2015).10.1063/1.4916554 ↗
15. Duschek, K., Uhlemann, M., Schlörb, H., Nielsch, K. & Leistner, K. Electrochemical and in-situ magnetic study of iron/iron oxide films oxidized and reduced in KOH solution for magneto-ionic switching. Electrochem. Commun. 72, 153–156 (2016).10.1016/j.elecom.2016.09.018 ↗
16. Walter, J. et al. Ion-gel-gating-induced oxygen vacancy formation in epitaxial La0.5Sr0.5CoO films from in operando X-ray and neutron scattering. Phys. Rev. Mater. 1, 071403 (2017).10.1103/PhysRevMaterials.1.071403 ↗
17. Walter, J., Wang, H., Luo, B., Frisbie, C. D. & Leighton, C. Electrostatic versus electrochemical doping and control of ferromagnetism in ion-gel-gated ultrathin La0.5Sr0.5CoO3-δ. ACS Nano 10, 7799–7810 (2016).10.1021/acsnano.6b03403 ↗
18. Leng, X. et al. Insulator to metal transition in WO3 induced by electrolyte gating. npj Quantum Mater. 2, 35 (2017).10.1038/s41535-017-0039-2 ↗
19. Zhang, Q. et al. Lithium-ion battery cycling for magnetism control. Nano. Lett. 16, 583–587 (2016).10.1021/acs.nanolett.5b04276 ↗
20. Zhu, X. et al. In situ nanoscale electric field control of magnetism by nanoionics. Adv. Mater. 28, 7658–7665 (2016).10.1002/adma.201601425 ↗
21. Dasgupta, S. et al. Toward on-and-off magnetism: reversible electrochemistry to control magnetic phase transitions in spinel ferrites. Adv. Funct. Mater. 26, 7507–7515 (2016).10.1002/adfm.201603411 ↗
22. Burr, G. W. et al. Neuromorphic computing using non-volatile memory. Adv. Phys. X 2, 89–124 (2017).
23. Pershin, Y. V. & Di Ventra, M. Experimental demonstration of associative memory with memristive neural networks. Neural Netw. 23, 881–886 (2010).10.1016/j.neunet.2010.05.001 ↗
24. Knag, P., Member, S., Lu, W. & Zhang, Z. A native stochastic computing architecture enabled by memristors. IEEE Trans. Nanotechnol. 13, 283–293 (2014).10.1109/TNANO.2014.2300342 ↗
25. Adams, B. D. & Chen, A. The role of palladium in a hydrogen economy. Mater. Today 14, 282–289 (2011).10.1016/S1369-7021(11)70143-2 ↗
26. Schlapbach, L. & Züttel, A. Hydrogen-storage materials for mobile applications. Nature 414, 353–358 (2002).10.1038/35104634 ↗
27. Yang, H., Thiaville, A., Rohart, S., Fert, A. & Chshiev, M. Anatomy of Dzyaloshinskii-Moriya Interaction at Co/Pt Interfaces. Phys. Rev. Lett. 115, 267210 (2015).10.1103/PhysRevLett.115.267210 ↗
28. Hoffmann, A. Spin Hall effects in metals. IEEE. Trans. Magn. 49, 5172–5193 (2013).10.1109/TMAG.2013.2262947 ↗
29. Parkin, S. S. P., Bhadra, R. & Roche, K. P. Oscillatory magnetic exchange coupling through thin copper layers. Phys. Rev. Lett. 66, 2152–2155 (1991).10.1103/PhysRevLett.66.2152 ↗
30. Campbell, C. T. Catalyst–support interactions: electronic perturbations. Nat. Chem. 4, 597–598 (2012).10.1038/nchem.1412 ↗
31. Rossmeisl, J., Logadottir, A. & Nørskov, J. K. Electrolysis of water on (oxidized) metal surfaces. Chem. Phys. 319, 178–184 (2005).10.1016/j.chemphys.2005.05.038 ↗
32. Rodriguez, J. A., Liu, P., Hrbek, J., Evans, J. & Pérez, M. Water gas shift reaction on Cu and Au nanoparticles supported on CeO2(111) and ZnO(0001): intrinsic activity and importance of support interactions. Angew. Chem. Int. Ed. 46, 1329–1332 (2007).10.1002/anie.200603931 ↗
33. Valov, I. & Lu, W. D. Nanoscale electrochemistry using dielectric thin films as solid electrolytes. Nanoscale 8, 13828–13837 (2016).10.1039/C6NR01383J ↗
34. Tsuruoka, T. et al. Effects of moisture on the switching characteristics of oxide-based, gapless-type atomic switches. Adv. Funct. Mater. 22, 70–77 (2012).10.1002/adfm.201101846 ↗
35. Yin, Q. et al. Cathode bubbles induced by moisture electrolysis in TiO2-x-based resistive switching cells. J. Phys. D. 49, 09LT01 (2016).10.1088/0022-3727/49/9/09LT01 ↗
36. Kreuer, K. Proton conductivity: materials and applications. Chem. Mater. 8, 610–641 (1996).10.1021/cm950192a ↗
37. Norby, T., Widerøe, M., Glöckner, R. & Larring, Y. Hydrogen in oxides. Dalt. Trans. 0, 3012–3018 (2004).
38. Shirpour, M., Gregori, G., Merkle, R. & Maier, J. On the proton conductivity in pure and gadolinium doped nanocrystalline cerium oxide. Phys. Chem. Chem. Phys. 13, 937–940 (2011).10.1039/C0CP01702G ↗
39. Bi, L., Boulfrad, S. & Traversa, E. Steam electrolysis by solid oxide electrolysis cells (SOECs) with proton-conducting oxides. Chem. Soc. Rev. 43, 8255–8270 (2014).10.1039/C4CS00194J ↗
40. Cohen, S. et al. The interaction of H2O with the surface of polycrystalline gadolinium at the temperature range of 300-570 K. Surf. Sci. 617, 29–35 (2013).10.1016/j.susc.2013.07.007 ↗
41. Stamenkovic, V. R., Strmcnik, D., Lopes, P. P. & Markovic, N. M. Energy and fuels from electrochemical interfaces. Nat. Mater. 16, 57–69 (2017).10.1038/nmat4738 ↗
42. Sander, D. et al. Reversible H-induced switching of the magnetic easy axis in Ni/Cu(001) thin films. Phys. Rev. Lett. 93, 247203 (2004).10.1103/PhysRevLett.93.247203 ↗
43. Munbodh, K., Perez, F. A., Keenan, C. & Lederman, D. Effects of hydrogen/deuterium absorption on the magnetic properties of Co/Pd multilayers. Phys. Rev. B 83, 94432 (2011).10.1103/PhysRevB.83.094432 ↗
44. Thompson, A. C. & Vaughn, D. X-Ray Data Booklet (Center for X-ray Optics and Advanced Light Source, Berkeley, 2001); http://xdb.lbl.gov
45. Bennett, P. A. & Fuggle, J. C. Electronic structure and surface kinetics of palladium hydride studied with X-ray photoelectron spectroscopy and electron-energy-loss spectroscopy. Phys. Rev. B 26, 6030–6039 (1982).10.1103/PhysRevB.26.6030 ↗
46. Davoli, I. et al. Palladium L3 absorption edge of PdH0.6 films: evidence for hydrogen induced unoccupied states. Solid State Commun. 71, 383–390 (1989).10.1016/0038-1098(89)90776-X ↗
47. Tew, M. W., Miller, J. T. & van Bokhoven, J. A. Particle size effect of hydride formation and surface hydrogen adsorption of nanosized palladium catalysts: L3 edge vs K edge X-ray absorption spectroscopy. J. Phys. Chem. C 113, 15140–15147 (2009).10.1021/jp902542f ↗
48. Richardson, T. J. et al. X-ray absorption spectroscopy of transition metal-magnesium hydride thin films. J. Alloys Compd. 356–357, 204–207 (2003).10.1016/S0925-8388(02)01237-9 ↗
49. Harris, J. J., Jolivet, R. & Attwell, D. Synaptic energy use and supply. Neuron 75, 762–777 (2012).10.1016/j.neuron.2012.08.019 ↗
50. Katase, T., Onozato, T., Hirono, M., Mizuno, T. & Ohta, H. A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry. Sci. Rep. 6, 25819 (2016).10.1038/srep25819 ↗