journal article·2021-08

Enhancing the figure of merit of n-type PbTe materials through multi-scale graphene induced interfacial engineering

Wenbin Qiu, Huan He, Zhengshang Wang, Qiujun Hu, Xudong Cui, Zhengguo Wang, Yan Zhang, Lin Gu, Lei Yang, Yixiang Sun, Liuwei Zhao, Longqing Chen, Hao Deng, Jun Tang

Nano Today· Volume 39
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Abstract

Abstract The intrinsically low thermal conductivity and excellent electrical properties of lead telluride (PbTe) compounds are highly promising for the thermoelectric conversion in intermediate temperature range. However, a problematic issue is that the inferior thermoelectric performance of n-type leg severely restricts the applications of PbTe-based thermoelectric couples. Here we report a highly boosted figure of merit peak value of 1.73 at 843 K in graphene-incorporated n-type PbTe compound. The dramatically improved thermoelectric performance is ascribed to the realization of a multi-scale feature of graphene-induced interfacial decorations distributing along grain boundaries, which creates massive PbTe/graphene interfaces for the manipulation of electron and phonon transport properties. In detail, lattice thermal conductivity is abundantly suppressed by the graphene-induced grain boundary scattering upon low-frequency phonons. Simultaneously, nano-scale graphene precipitates trigger the energy filtering effect, bringing about distinctly enhanced Seebeck coefficient and power factor. The present strategy of implementing high-efficiency interfacial engineering (IE) from graphene additions with multiple scales offers an applicable pathway for fabricating high-performance thermoelectric materials with both optimized thermal and electrical transport properties.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal properties of materials · Thermal Radiation and Cooling Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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