Direct bandgap transition for emission in GeSn nanowires
Source abstract
Abstract
Abstract We investigate the structural, energetic, and electronic properties of Sn-doped germanium nanowires (NWs) along [001] direction, with various diameters. The direct bandgap transition is explored by the tensile strain of GeSn alloy for emission near 0.8 eV in the third optical communication window. Our first-principles calculations show that the direct bandgap transformation can be achieved in GeSn NW-shell with uniaxial strain change. Drawing inspiration from the significant expansion of Ge volume, the 7.5–14.04% Sn is proposed to be doped into the GeSn alloy for a dramatic transition into a direct bandgap in NWs. The calculation demonstrates that the direct bandgap transition is determined not only by the doping contents of Sn atoms, but also by changing symmetry and distribution region of the Sn atomic in GeSn alloy, where the Sn concentration is needed to transform into direct bandgap increases with the larger diameter of NWs. According to these results, a physical model with three levels system for stimulated emission in the optical communication windows is built, in which the external quantum efficiency of emission is higher than 20%.
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Research context
OpenAlex topics: Photonic and Optical Devices · Mechanical and Optical Resonators · Advanced MEMS and NEMS Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
College of Materials and Metallurgy, Institute of Nanophotonic Physics, Guizhou University , Guiyang , 550025 , China
State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University , Shanghai , 200433 , China
State Key Laboratory of Environment Geochemistry, Institute of Geochemistry , Guiyang , 550003 , China
References (43)
Show source-provided references
1. Xia FN, Sekaric L, Vlasov Y. Ultracompact optical buffers on a silicon chip. Nat Photonics. 2007;1:65–71.10.1038/nphoton.2006.42 ↗
2. Xu Q, Schmidt B, Pradhan S, Lipson M. Micrometre-scale silicon electro-optic modulator. Nature. 2005;435:325–7.10.1038/nature03569 ↗
3. Molina J, Escobar JE, Ramos D, Gil-Santos E, Ruz JJ, Tamayo J, et al. High dynamic range nanowire resonators. Nano Lett. 2021;21:6617–24.10.1021/acs.nanolett.1c02056 ↗
4. Tenerz L, Hök B. Silicon microcavities fabricated with a new technique. Electron Lett. 1986;22:615–6.10.1049/el:19860418 ↗
5. Shimbo M, Furukawa K, Fukuda K, Tanzawa K. Silicon‐to‐silicon direct bonding method. J Appl Phys. 1986;60:2987–9.10.1063/1.337750 ↗
6. Fang AW, Park H, Cohen O, Jones R, Paniccia MJ, Bowers JE. Electrically pumped hybrid AlGaInAs-silicon evanescent laser. Opt Express. 2006;14:9203–10.10.1364/OE.14.009203 ↗
7. Park H, Fang AW, Kodama S, Bowers JE. Hybrid silicon evanescent laser fabricated with a silicon waveguide and III–V offset quantum wells. Opt Express. 2005;13:9460–4.10.1364/OPEX.13.009460 ↗
8. Chen R, Tran TT, Ng KW, Ko WS, Chuang LC, Sedgwick FG, et al. Nanolasers grown on silicon. Nat Photonics. 2011;5:170–5.10.1038/nphoton.2010.315 ↗
9. Wang WI. Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100). Appl Phys Lett. 1984;44:1149–51.10.1063/1.94673 ↗
10. Fischer R, Morkoç H, Neumann DA, Zabel H, Choi C, Otsuka N, et al. Material properties of high-quality GaAs epitaxial layers grown on Si substrates. J Appl Phys. 1986;60:1640–7.10.1063/1.337253 ↗
11. Ennen H, Pomrenke G, Axmann A, Eisele K, Haydl W, Schneider J. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy. Appl Phys Lett. 1985;46:381–3.10.1063/1.95639 ↗
12. Hsu K, Loh WH, Dong L, Miller CM. Efficient and tunable Er/Yb fiber grating lasers. J Lightwave Technol. 1997;15:1438–41.10.1109/50.618376 ↗
13. Luo L, Zhang X, Li K, Cheah K, Gong M, Shi J, Wong W. Strong near-infrared photoluminescence in erbium/ytterbium codoped porous silicon. Appl Phys Lett. 2005;86:212505.10.1063/1.1925776 ↗
14. Luo L, Zhang XX, Li KF, Cheah KW, Shi JX, Wong WK, Gong ML. Er/Yb doped porous silicon – a novel white light source. Adv Mater. 2004;16:1664–7.10.1002/adma.200306609 ↗
15. Franzò G, Vinciguerra V, Priolo F. The excitation mechanism of rare-earth ions in silicon nanocrystals. Appl Phys A. 1999;69:3–12.10.1007/s003390050967 ↗
16. Kippenberg T, Kalkman J, Polman A, Vahala K. Demonstration of an erbium-doped microdisk laser on a silicon chip. Phys Rev A. 2006;74:051802.10.1103/PhysRevA.74.051802 ↗
17. Canham LT. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers. Appl Phys Lett. 1990;57:1046–8.10.1063/1.103561 ↗
18. Wilson WL, Szajowski P, Brus L. Quantum confinement in size-selected, surface-oxidized silicon nanocrystals. Science. 1993;262:1242–4.10.1126/science.262.5137.1242 ↗
19. Kovalev D, Heckler H, Ben-Chorin M, Polisski G, Schwartzkopff M, Koch F. Breakdown of the k-conservation rule in Si nanocrystals. Phys Rev Lett. 1998;81:2803–6.10.1103/PhysRevLett.81.2803 ↗
20. Chen YH, Li C, Zhou ZW, Lai HK, Chen SY, Ding WC, et al. Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate. Appl Phys Lett. 2009;94:141902.10.1063/1.3114408 ↗
21. Bonfanti M, Grilli E, Guzzi M, Virgilio M, Grosso G, Chrastina D, et al. Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers. Phys Rev B. 2008;78:041407.10.1103/PhysRevB.78.041407 ↗
22. Guichard AR, Barsic DN, Sharma S, Kamins TI, Brongersma ML, Guichard Alex R, et al. Tunable light emission from quantum-confined excitons in TiSi2-catalyzed silicon nanowires. Nano Lett. 2006;6:2140–4.10.1021/nl061287m ↗
23. Huang ZM, Liu SR, Peng HY, Li X, Huang WQ. Abrupt change effect of bandgap energy on quantum system of silicon nanowire. Crystals. 2020;10:340.10.3390/cryst10050340 ↗
24. Ma D, Lee C, Au F, Tong S, Lee S. Small-diameter silicon nanowire surfaces. Science. 2003;299:1874–7.10.1126/science.1080313 ↗
25. Pavesi L, Dal Negro L, Mazzoleni C, Franzò G, Priolo F. Optical gain in silicon nanocrystals. Nature. 2000;408:440–4.10.1038/35044012 ↗
26. Huang ZM, Huang WQ, Liu SR, Dong TG, Wang G, Wu XK, et al. Enhanced emission in the three-level system of Si and Ge nanostructures. Opt Commun. 2017;383:1–5.10.1016/j.optcom.2016.08.066 ↗
27. Huang WQ, Huang ZM, Miao XJ, Liu SR, Qin CJ. Physical model for activation of emission on silicon quantum dots. Acta Phys Sin. 2012;61:214205.10.7498/aps.61.214205 ↗
28. Van de Walle CG. Band lineups and deformation potentials in the model-solid theory. Phys Rev B. 1989;39:1871–83.10.1103/PhysRevB.39.1871 ↗
29. Ladrón de Guevara HP, Rodrıguez A, Navarro-Contreras H, Vidal M. Determination of the optical energy gap of Ge1−xSnx alloys with 0 < x < 0.14. Appl Phys Lett. 2004;84:4532–4.10.1063/1.1758772 ↗
30. Nakamura Y, Fujinoki N, Ichikawa M. Photoluminescence from Si-capped GeSn nanodots on Si substrates formed using an ultrathin SiO2 film technique. J Appl Phys. 2009;106:014309.10.1063/1.3159902 ↗
31. Reboud V, Gassenq A, Pauc N, Aubin J, Milord L, Thai QM, et al. Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K. Appl Phys Lett. 2017;111:092101.10.1063/1.5000353 ↗
32. Oehme M, Schmid M, Kaschel M, Gollhofer M, Widmann D, Kasper E, et al. GeSn p-i-n detectors integrated on Si with up to 4% Sn. Appl Phys Lett. 2012;101:141110.10.1063/1.4757124 ↗
33. Dutt B, Lin H, Sukhdeo DS, Vulovic BM, Gupta S, Nam D, et al. Theoretical analysis of GeSn alloys as a gain medium for a Si-compatible laser. IEEE J Sel Top Quantum Electron. 2013;19:1502706.10.1109/JSTQE.2013.2241397 ↗
34. Kouvetakis J, Menendez J, Chizmeshya A. Tin-based group IV semiconductors: new platforms for opto-and microelectronics on silicon. Annu Rev Mater Res. 2006;36:497–554.10.1146/annurev.matsci.36.090804.095159 ↗
35. Li H, Cui Y, Wu K, Tseng W, Cheng H, Chen H. Strain relaxation and Sn segregation in GeSn epilayers under thermal treatment. Appl Phys Lett. 2013;102:251907.10.1063/1.4812490 ↗
36. Tsukamoto T, Hirose N, Kasamatsu A, Mimura T, Matsui T, Suda Y. Formation of GeSn layers on Si (001) substrates at high growth temperature and high deposition rate by sputter epitaxy method. J Mater Sci. 2015;50:4366–70.10.1007/s10853-015-8990-4 ↗
37. Tahini H, Chroneos A, Grimes RW, Schwingenschlögl U, Dimoulas A. Strain-induced changes to the electronic structure of germanium. J Phys: Condens Matter. 2012;24:195802.10.1088/0953-8984/24/19/195802 ↗
38. Ghetmiri SA, Margetis W, Du J, Mosleh A, Cousar L, Conley BR, et al. Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence. Appl Phys Lett. 2014;105:151109.10.1063/1.4898597 ↗
39. Wirths S, Geiger R, Von Den Driesch N, Mussler G, Stoica T, Mantl S, et al. Lasing in direct-bandgap GeSn alloy grown on Si. Nat Photonics. 2015;9:88–92.10.1038/nphoton.2014.321 ↗
40. Wen S, Zhang X, Zhao C, Zhang H, Wang X, Li J. Electronic structure and optical properties of Ge96−xSnx (0 ≤ x ≤ 50): a first-principles study. Mater Today Commun. 2021;28:102499.10.1016/j.mtcomm.2021.102499 ↗
41. Biswas S, Doherty J, Saladukha D, Ramasse Q, Majumdar D, Upmanyu M, et al. Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires. Nat Commun. 2016;7:11405.10.1038/ncomms11405 ↗
42. Huang ZM, Huang WQ, Liu SR, Dong TG, Wang G, Wu XK, et al. Emission of direct-gap band in germanium with Ge–GeSn layers on one-dimensional structure. Sci Rep. 2016;6:24802.10.1038/srep24802 ↗
43. Zhang L, Hong H, Qian K, Wu S, Lin G, Wang J, et al. Controllable synthesis of Si-based GeSn quantum dots with room-temperature photoluminescence. Appl Surf Sci. 2022;579:152249.10.1016/j.apsusc.2021.152249 ↗