Fabrication and simulation of 1540-nm transmission by 532-nm excitation in photonic crystal of Er:ZnO film
Source abstract
Abstract
Abstract Erbium (Er)-doped ZnO thin film is fabricated on sapphire substrate by radio frequency magnetron sputtering technology. The as-deposited Er:ZnO film has a good film quality and exhibits excellent single-mode waveguide characteristic. A photonic crystal structure in the Er:ZnO film is fabricated by focused-ion-beam etching. When the film is stimulated by a 532 nm laser, photoluminescence (PL) at 1540 nm can be excited. Simulation results show that the propagation of Er-related emission of 1540 nm will be well restricted along a certain direction in the photonic crystal structure. It provides a novel way to control and confine the transmission of light in ZnO waveguide and will be applicable for the application of Er:ZnO photonic devices.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Photonic Crystals and Applications · Photonic and Optical Devices · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Information Science and Engineering, Shandong University, Jinan, Shandong 250100, China
References (54)
Show source-provided references
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