Effect of indium doping on structure and thermoelectric properties of bismuth telluride
Source abstract
Abstract
Abstract Owing to their high near-room-temperature conversion efficiency, bismuth telluride (Bi 2 Te 3 ) and its alloys are prominent thermoelectric (TE) materials. Indium (In) is an uncommon dopant in TE materials, yet the TE properties of hydrothermally synthesized In-doped Bi 2 Te 3 have not been reported. Herein, we report the synthesis of In-doped Bi 2− x In x Te 3 ( x = 0, 0.1, 0.2, 0.3) by a hydrothermal method combined with hot press sintering. The incorporation of In enhanced the Seebeck coefficient and suppressed thermal conductivity, primarily due to the reduced carrier concentrations and intensified phonon scattering. Consequently, a maximum zT value of 0.21 was obtained at 350 K for Bi 1.9 In 0.1 Te 3 sample, approximately 162.5% improvement over the undoped counterpart, demonstrating the effectiveness of In doping in improving the TE properties of Bi 2 Te 3 .
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Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Topological Materials and Phenomena · Advanced Semiconductor Detectors and Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Anhui Engineering Research Center of Highly Reactive Micro-Nano Powders, Chizhou University
Weifang Vocational College
Phonon Engineering Research Center of Jiangsu Province, Ministry of Education Key Laboratory of NSLSCS, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University
Center for High Pressure Science & Technology Advanced Research
Chizhou Tinci High-Tech Materials Co.,Ltd
Funding
Natural Science Research Project of Anhui Provincial Department of Education · Anhui Provincial Quality Engineering Project · Chizhou University Scientific Research Startup Fund for High-Level Talents · Anhui Provincial Materials Processing Experiment and Training Center Project
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