Cascading reconfigurable skyrmion logic devices: simplified architectures for versatile computing systems
Source abstract
Abstract
Abstract Magnetic skyrmions, topologically protected and particle-like spin textures, have emerged as promising candidates for the development of high-density, low-power, and multifunctional spintronic memory and logic devices. In this work, we have employed micromagnetic simulations to demonstrate a significant advancement in skyrmion-based logic device design, emphasizing reconfigurability and architectural simplicity. We have designed AND and OR logic gates by individually controlling the skyrmion motion by tapering the output arm. Furthermore, a single device structure capable of executing both AND and OR logic operations is achieved through the use of voltage-controlled magnetic anisotropy (VCMA) gates, thereby eliminating the need for multiple device types and enhancing fabrication efficiency and scalability. The concept is further extended to achieve reconfigurable NAND/NOR operations through seamless VCMA-driven switching. Additionally, cascaded AND gate architectures are demonstrated to enable reconfigurable AND/OR functionalities. Critical operational regimes have been systematically explored across a wide range of material parameters to ensure robustness and reliability. These findings highlight the potential of skyrmion-based logic devices for advancing energy-efficient and versatile computing technologies.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Magnetic properties of thin films · Advanced Memory and Neural Computing · Quantum-Dot Cellular Automata
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (32)
Show source-provided references
1. Above-room-temperature chiral skyrmion lattice and Dzyaloshinskii–Moriya interaction in a van der Waals ferromagnet Fe3−xGaTe210.1038/s41467-024-48799-9 ↗
2. Magnetic skyrmions and their stabilization mechanism in two-dimensional C r2(X, Y) Te6 (X, Y= C, Si, Ge, Sn, X≠ Y) monolayers10.1103/PhysRevResearch.7.013291 ↗
3. A theory on skyrmion size10.1038/s42005-018-0029-0 ↗
4. Interplay between interfacial Dzyaloshinskii Moriya interaction and magnetic anisotropy in 4d transition metal multilayers for skyrmion nucleation
5. The role of magnetic dipolar interactions in skyrmion lattices10.1016/j.newton.2025.100036 ↗
6. Spontaneous skyrmion ground states in magnetic metals10.1038/nature05056 ↗
7. Field driven evolution of periodic antiferromagnetic skyrmion in non-centrosymmetric semiconducting monolayer10.1039/d5nr03229f ↗
8. Skyrmion-mediated nonvolatile ternary memory10.1038/s41598-024-66853-w ↗
9. Skyrmion devices for memory and logic applications10.1063/5.0042917 ↗
10. Applications of magnetic skyrmions10.7693/wl20230103 ↗
11. Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems10.1103/RevModPhys.91.035004 ↗
12. Spin-orbit torque driven skyrmion motion under unconventional spin hall effect10.1088/1367-2630/ac6c45 ↗
13. Thermal stability and topological protection of skyrmions in nanotracks10.1038/s41598-017-03391-8 ↗
14. Emergent mechanics of magnetic skyrmions deformed by defects10.1103/PhysRevLett.131.246701 ↗
15. Investigating skyrmion stability and core polarity reversal in NdMn2Ge210.1038/s41598-024-82114-2 ↗
16. Skyrmions-based logic gates in one single nanotrack completely reconstructed via chirality barrier10.1093/nsr/nwac021 ↗
17. Reconfigurable logic operations via gate controlled skyrmion motion in a nanomagnetic device10.1021/acsaelm.2c00122 ↗
18. Reconfigurable skyrmion logic gates10.1021/acs.nanolett.7b04722 ↗
19. Skyrmion logic clocked via voltage controlled magnetic anisotropy10.1063/5.0049024 ↗
20. Enhancing voltage-controlled magnetic anisotropy in Fe80 B20/MgO/HfO2 thin films by dielectric constant modulation10.1103/PhysRevMaterials.6.104406 ↗
21. Large voltage-induced coercivity change in Pt/Co/CoO/amorphous TiOx structure and heavy metal insertion effect10.1038/s41598-021-00960-w ↗
22. Adjustment of magnetic characteristics for [Co/Pt] multilayer thin films10.3390/coatings15020186 ↗
23. The design and verification of MuMax310.1063/1.4899186 ↗
24. Current-driven skyrmion dynamics in disordered films10.1063/1.4979316 ↗
25. Universal skyrmion logic gates and circuits based on antiferromagnetically coupled skyrmions without a topological hall effect10.1039/D4NA00706A ↗
26. Suppression of the skyrmion hall effect in synthetic ferrimagnets with gradient magnetization10.1103/PhysRevResearch.6.023199 ↗
27. How to measure the local Dzyaloshinskii-Moriya interaction in skyrmion thin-film multilayers10.1038/s41598-019-39501-x ↗
28. Memory functions of magnetic skyrmions10.7567/JJAP.54.053001 ↗
29. Interplay between interfacial Dzyaloshinskii–Moriya interaction and magnetic anisotropy in 4d transition metal multilayers for skyrmion nucleation10.1016/j.jmmm.2025.173036 ↗
30. The 2020 skyrmionics roadmap10.1088/1361-6463/ab8418 ↗
31. Voltage-controlled magnetic anisotropy and voltage-induced Dzyaloshinskii-Moriya interaction change at the epitaxial Fe(001)/MgO(001) interface engineered by Co and Pd atomic-layer insertion10.1103/PhysRevB.98.144432 ↗
32. Temperature dependence of the voltage-controlled perpendicular anisotropy in nanoscale MgO|CoFeB|Ta magnetic tunnel junctions10.1063/1.4869152 ↗