Optimizing the analog synaptic characteristics of memristors by regulating the distribution of barrier layers
Source abstract
Abstract
Abstract Memristors are promising candidates for artificial synapses in neuromorphic computing systems, yet their performance is often limited by nonlinear conductance modulation in oxide-based memristors. This work systematically investigates the modulation mechanism governing conductive filament (CF) rupture behavior utilizing distributed barrier layers based on finite element simulations. Our initial electro-thermal simulations of a HfO 2 -based memristor with a single-layer Al 2 O 3 barrier (SLB) thickness ( h = 0, 3, 6, 12 nm) showed only limited improvement in synaptic linearity. In contrast, the introduction of a (HfO 2 /Al 2 O 3 ) n multilayer barrier (MLB) structure fundamentally alters the switching dynamics. Simulations reveal that appropriately increasing the number of layers ( n ) promotes a transition from continuous to spatially discrete oxygen vacancy migration pathways. This engineered disorder expands the CF rupture region from a localized position to multiple interfaces, thereby reducing the electric field and temperature peaks and driving the set and reset process from abrupt to gradual switching. The optimized MLB device ( n = 4) exhibits significantly enhanced synaptic linearity and analog switching characteristics, closely emulating biological synapse behavior. Furthermore, system-level validation using this device model achieved an accuracy of 94.34% in handwritten digit recognition. This work elucidates the physical mechanism by which MLBs enhance conductance linearity, providing a novel design strategy for high-performance memristive synapses.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (52)
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1. Perspective: a review on memristive hardware for neuromorphic computation10.1063/1.5037835 ↗
2. Analog control of retainable resistance multistates in HfO2 resistive-switching random access memories (ReRAMs)10.1021/acsaelm.9b00094 ↗
3. Memristive brain-like computing10.7498/aps.71.20220666 ↗
4. Low-power memristor for neuromorphic computing: from materials to applications10.1007/s40820-025-01705-4 ↗
5. Correction: interface-engineered reliable HfO2-based RRAM for synaptic simulation10.1039/C9TC90222H ↗
6. In-depth analysis of core-shell filaments in nonvolatile NbOx memristive device as an artificial synapse for multifunctional bionic applications10.1007/s11431-023-2469-8 ↗
7. Numerical characterization of a 5-Layer (Pt/Ta/TaO/AlO/W) RRAM device
8. Robust Ag/ZrO2/WS2/Pt memristor for neuromorphic computing10.1021/acsami.9b17160 ↗
9. HfOx/AlOy superlattice‐like memristive synapse10.1002/advs.202201446 ↗
10. An ion-gating synaptic memristor based on tri-layer HfOx composition regulation10.1039/D4TC04564E ↗
11. Comprehensive physical model of dynamic resistive switching in an oxide memristor
12. Optimization of non-linear conductance modulation based on metal oxide memristors10.1515/ntrev-2018-0045 ↗
13. Tuning the analog synaptic properties of forming free SiO2 memristors by material engineering10.1063/5.0044647 ↗
14. Trade-off between gradual set and on/off ratio in HfOx-based analog memory with a thin SiOx barrier layer10.1021/acsaelm.3c00131 ↗
15. Impact of AlOy interfacial layer on resistive switching performance of flexible HfOx/AlOy ReRAMs10.1109/TED.2021.3084554 ↗
16. Resistive switching memory properties of layer-by-layer assembled enzyme multilayers10.1088/0957-4484/23/15/155604 ↗
17. Atomic layer deposition of Ga2O3/ZnO composite films for high-performance forming-free resistive switching memory10.1021/acsami.0c06476 ↗
18. Stepped identical reset-pulse and lookup table programming of multilevel conductance in HfOx/AlOy superlattice-like memristors10.1109/TED.2023.3294352 ↗
19. Back‐end‐of‐line integration of synaptic weights using HfO2/ZrO2 nanolaminates10.1002/aelm.202300649 ↗
20. Multimode synaptic operation of a HfAlOx-based memristor as a metaplastic device for neuromorphic applications10.1021/acsaelm.2c00320 ↗
21. Origin of a continuously enlarge memristor effect in Nb inserted into MgB2 multilayer constructed heterojunctions10.1016/j.vacuum.2018.02.038 ↗
22. Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors10.1007/s00339-012-6902-x ↗
23. On the plausibility of thermodiffusion as the primary mechanism for unipolar resistive switching in metal-oxide-metal memristive devices
24. Effect of filament regimes in the resistive switching behavior of oxide-based complementary memristor10.1007/s10825-025-02306-5 ↗
25. Investigation of filament formation and surface perturbation in nanoscale-Y2O3 memristor: a physical modeling approach10.1007/s11664-024-10967-4 ↗
26. Comprehensive numerical modeling of filamentary RRAM devices including voltage ramp-rate and cycle-to-cycle variations10.1063/1.5042789 ↗
27. Resistive switching by voltage-driven ion migration in bipolar RRAM—Part II: modeling10.1109/TED.2012.2202320 ↗
28. Universal reset characteristics of unipolar and bipolar metal-oxide RRAM10.1109/TED.2011.2161088 ↗
29. High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory10.1038/s41524-020-00455-8 ↗
30. Thermodynamic analysis of conductive filaments10.1063/1.4962136 ↗
31. Implementing a type of synaptic coupling between excitatory and inhibitory cells by using Pt/Poly(3,4-ethylenedioxythiophene):Polystyrenesulfonate/HfOx/Pt memristive structure10.1021/acs.jpcc.9b11085 ↗
32. Resistive switching modulation by incorporating thermally enhanced layer in HfO2-based memristor10.1088/1361-6528/ad0486 ↗
33. Quantitative, dynamic TaOx memristor/resistive random access memory model10.1021/acsaelm.9b00792 ↗
34. Physical electro-thermal model of resistive switching in bi-layered resistance-change memory10.1038/srep01680 ↗
35. MoS2 memristors exhibiting variable switching characteristics toward biorealistic synaptic emulation10.1021/acsnano.8b03977 ↗
36. Asymmetric resistive switching of bilayer HfOx/AlOy and AlOy/HfOx memristors: the oxide layer characteristics and performance optimization for digital set and analog reset switching10.1021/acsaelm.3c00079 ↗
37. Resistance random access memory based on a thin film of CdS nanocrystals prepared via colloidal synthesis10.1002/smll.201200488 ↗
38. 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
39. Novel solution‐processed Fe2O3 /WS2 hybrid nanocomposite dynamic memristor for advanced power efficiency in neuromorphic computing10.1002/advs.202408133 ↗
40. ReRAM-based synaptic device for neuromorphic computing
41. 3-D physical electro-thermal modeling of nanoscale Y2O3 memristors for synaptic application10.1109/TED.2022.3166858 ↗
42. Experimental validation of switching dependence of nanoscale Y2O3 memristors on electrode symmetry via physical electrothermal modeling10.1021/acsaelm.3c00598 ↗
43. Tuning ionic transport in memristive devices by graphene with engineered nanopores10.1021/acsnano.5b07943 ↗
44. Geometric design of confined conducting filaments in resistive random access memory by Al2O3 nanodome-shaped arrays (ndsas) via glancing-angle deposition technology toward neuromorphic computing10.1021/acsmaterialslett.1c00513 ↗
45. Controlling the digital-to-analog switching in HfO2-based memristors via modulating the oxide thickness10.1016/j.jallcom.2024.176890 ↗
46. Exploring thickness-dependent Cu/TiOx:Cu/Ti memristor and chaotic dynamics in a real fifth-order memristive circuit10.1007/s11071-023-09032-2 ↗
47. Experimental demonstration of a second-order memristor and its ability to biorealistically implement synaptic plasticity10.1021/acs.nanolett.5b00697 ↗
48. Thermal crosstalk analysis in RRAM passive crossbar arrays10.48550/arXiv.2304.01439 ↗
49. Comprehensive model of electron conduction in oxide-based memristive devices10.1021/acsaelm.1c00398 ↗
50. Filamentary TaOx/HfO2 ReRAM devices for neural networks training with analog in‐memory computing10.1002/aelm.202200448 ↗
51. Bio‐realistic synaptic‐replicated “V” type oxygen vacancy memristor10.1002/adfm.202416325 ↗
52. Fully printed all-solid-state organic flexible artificial synapse for neuromorphic computing10.1021/acsami.9b00226 ↗