Electro- and magneto-optical response of the bilayer InSe quantum dot
Source abstract
Abstract
Abstract Using the tight-binding method, we investigated the band structures, density of states, and optical absorption spectra of bilayer InSe quantum dots (QDs) with different stacking configurations. Further studies were conducted to examine the effects of external electric and magnetic fields on the band structures, as well as the electro- and magneto-optical absorption spectra. Our results reveal that the QD stacking structure significantly influences the bandgap, while the external fields modulates the anisotropy of the optical properties. This work provides valuable insights for experimental studies of InSe’s photoelectric properties and the development of anisotropic optical devices.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · 2D Materials and Applications · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (44)
Show source-provided references
1. Electric field effect in atomically thin carbon films10.1126/science.1102896 ↗
2. The rise of graphene10.1038/nmat1849 ↗
3. The structure of suspended graphene sheets10.1038/nature05545 ↗
4. Hybrid k⋅p tight-binding model for intersubband optics in atomically thin InSe films10.1103/PhysRevB.97.165304 ↗
5. Optical emission enhancement of bent InSe thin films10.1007/s11432-020-3149-2 ↗
6. 2-D layered materials for next-generation electronics: opportunities and challenges10.1109/TED.2018.2867441 ↗
7. Two-dimensional material nanophotonics10.1038/nphoton.2014.271 ↗
8. Van der Waals heterostructures10.1038/nature12385 ↗
9. Single-layer MoS2 transistors10.1038/nnano.2010.279 ↗
10. Two-dimensional atomic crystals10.1073/pnas.0502848102 ↗
11. How good can monolayer MoS2 transistors be?10.1021/nl2018178 ↗
12. Polarity reversed robust carrier mobility in monolayer MoS2 nanoribbons10.1021/ja4109787 ↗
13. Why all the fuss about 2D semiconductors?10.1038/nphoton.2016.53 ↗
14. Strain-tunable electronic and optical properties of novel MoSSe/InSe van der Waals heterostructures10.1016/j.physleta.2021.127395 ↗
15. Electronic structure of the layer compounds GaSe and InSe in a tight-binding approach10.1103/PhysRevB.65.125206 ↗
16. InSe: a two-dimensional material with strong interlayer coupling10.1039/C7NR09486H ↗
17. Anomalous interlayer vibrations in few-layer InSe induced by weak intralayer bonding10.1063/5.0166258 ↗
18. Signatures of strong interlayer coupling in γ-InSe revealed by local differential conductivity10.1088/1674-1056/abff32 ↗
19. Computational mining of photocatalysts for water splitting hydrogen production: two-dimensional InSe-family monolayers10.1039/C7CY00090A ↗
20. High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures10.1002/adma.201500889 ↗
21. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe10.1038/nnano.2016.242 ↗
22. Evolution of the electronic band structure and efficient photo-detection in atomic layers of InSe10.1021/nn405036u ↗
23. Switchable two-dimensional electrides: a first-principles study10.1103/PhysRevB.103.125103 ↗
24. Electric field controlled indirect-direct-indirect band gap transition in monolayer InSe10.1186/s11671-019-3162-0 ↗
25. The structure and electronic and magnetic properties of MX (M = Ga, In; X = S, Se, Te) nanoribbons10.1142/S0217979220501684 ↗
26. Enhanced piezoelectric effect in Janus group-III chalcogenide monolayers10.1063/1.4981877 ↗
27. Comparative study of doping properties and the effect on sliding barriers in γ-InSe10.1063/5.0252813 ↗
28. Tunable contacts in graphene/InSe van der Waals heterostructures10.1021/acs.jpcc.0c06890 ↗
29. Bias-controlled multi-functional transport properties of InSe/BP van der Waals heterostructures10.1038/s41598-021-87442-1 ↗
30. Computational study of ohmic contact at bilayer InSe-metal interfaces: implications for field-effect transistors10.1021/acsanm.9b01375 ↗
31. The optical properties of few-layer InSe10.1063/5.0018480 ↗
32. Spin-charge conversion in InSe bilayers10.1103/PhysRevB.99.155402 ↗
33. Electrons and phonons in single layers of hexagonal indium chalcogenides from ab initio calculations10.1103/PhysRevB.89.205416 ↗
34. Ab initio study of carrier mobility of few-layer InSe10.7567/APEX.9.035203 ↗
35. Current-induced spin polarization in monolayer InSe10.1103/PhysRevB.100.245409 ↗
36. Layer number-dependent raman spectra of γ-InSe10.1021/acs.jpclett.2c00504 ↗
37. Enhancement of photoluminescence and hole mobility in 1- to 5-layer InSe due to the top valence-band inversion: strain effect10.1039/C8NR03172J ↗
38. Lattice vibration characteristics in layered InSe films and the electronic behavior of field-effect transistors10.1088/1361-6528/ab8df1 ↗
39. The electric field modulated data storage in bilayer InSe10.1039/C7TC03698A ↗
40. Electronic and optical properties of two-dimensional InSe from a DFT- parameterized tight-binding model10.1103/PhysRevB.94.245431 ↗
41. Tunable electric properties of bilayer InSe with different interlayer distances and external electric field10.1088/1361-6641/aaaad2 ↗
42. Simplified LCAO method for the periodic potential problem10.1103/PhysRev.94.1498 ↗
43. Quantum tunneling through graphene nanorings10.1088/0957-4484/21/18/185201 ↗
44. Bilayer phosphorene: effect of stacking order on bandgap and its potential applications in thin-film solar cells10.1021/jz500409m ↗