Solution processed Ti₃C₂ MXene nanosheets as resistive switching layers in flexible RRAM devices for sustainable electronics

Abstract Due to their exceptional chemical stability and tunable chemical properties particularly the interlayer bonding, MXenes have emerged as promising switching layers in RRAM devices. This work presents the synthesis of nanosheets of a widely explored MXene (Ti₃C₂), and its application for demonstrating high performance flexible RRAM devices through solution processing, which is rarely demonstrated till date. The structural and morphological properties of Ti₃C₂ nanosheets were comprehensively investigated using various characterization techniques. RRAM devices were fabricated on ITO coated PET substrate with both Ag and Al as top electrodes. The Ag/Ti₃C₂/ITO RRAM devices showed excellent retention time of 10⁴ s with I _ON/I _OFF of ∼10³ and low average V _SET & V _RESET voltages of ∼0.8 V &- 0.7 V suitable for low voltage operation. On the other hand Al/Ti₃C₂/ITO RRAM devices exhibited similar excellent retention time of 10⁴ s and reliable switching characteristics with higher I _ON/I _OFF of ∼10⁴, yet a high V _SET of 3.5 V and low V _RESET of −0.85 V. These devices were further investigated for stability of electrical performance upon bending at various radii of 12 mm, 7 mm, and 5 mm, indicating consistent switching. Among the two, the Al/Ti₃C₂/ITO device exhibited superior mechanical flexibility, maintaining a higher I _ON/I _OFF (∼10⁴–10⁵) and stable retention of both LRS and HRS under bending radii down to 5 mm, whereas the Ag/Ti₃C₂/ITO device showed a noticeable decline in HRS stability and I _ON/I _OFF (from ∼10³ to ∼10¹), indicating the Al-based device is more feasible for flexible memory applications. These findings confirm that solution-processed Ti₃C₂ can be a promising switching layer for flexible and sustainable electronics.