Long indium-rich InGaAs nanowires by SAG-HVPE
Source abstract
Abstract
Abstract We demonstrate the selective area growth of InGaAs nanowires (NWs) on GaAs (111)B substrates using hydride vapor phase epitaxy (HVPE). A high growth rate of more than 50 μm h−1 and high aspect ratio NWs were obtained. Composition along the NWs was investigated by energy dispersive x-ray spectroscopy giving an average indium composition of 84%. This is consistent with the composition of 78% estimated from the photoluminescence spectrum of the NWs. Crystal structure analysis of the NWs by transmission electron microscopy indicated random stacking faults related to zinc-blende/wurtzite polytypism. This work demonstrates the ability of HVPE for growing high aspect ratio InGaAs NW arrays.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Nanowire Synthesis and Applications · Advancements in Semiconductor Devices and Circuit Design · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (36)
Show source-provided references
1. Synthesis and applications of III–V nanowires10.1021/acs.chemrev.9b00075 ↗
2. III–V nanowires and nanowire optoelectronic devices10.1088/0022-3727/48/46/463001 ↗
3. Selective-area growth of III-V nanowires and their applications10.1557/jmr.2011.103 ↗
4. Review article: molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)10.1116/1.4972049 ↗
5. Single-crystalline InGaAs nanowires for room-temperature high-performance near-Infrared photodetectors10.1007/s40820-015-0058-0 ↗
6. Monolithic InGaAs nanowire array lasers on silicon-on-insulator operating at room temperature10.1021/acs.nanolett.7b00384 ↗
7. A III–V nanowire channel on silicon for high-performance vertical transistors10.1038/nature11293 ↗
8. Current increment of tunnel field-effect transistor using ingaas nanowire/si heterojunction by scaling of channel length10.1063/1.4865921 ↗
9. In x Ga1–x As nanowires on silicon: one-dimensional heterogeneous epitaxy, bandgap engineering, and photovoltaics10.1021/nl202676b ↗
10. Vertical InGaAs nanowire array photodiodes on Si10.1021/acsphotonics.8b01089 ↗
11. Vapor–liquid–solid mechanism of single crystal growth10.1063/1.1753975 ↗
12. Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy10.1016/j.jcrysgro.2013.07.038 ↗
13. Composition and phase tuned InGaAs alloy nanowires10.1021/jp2003276 ↗
14. Direct imaging of single Au atoms within GaAs nanowires10.1021/nl300314k ↗
15. Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications10.1021/nl104316t ↗
16. Catalyst-free nanowires with axial In x Ga1−x As/GaAs heterostructures10.1088/0957-4484/20/7/075603 ↗
17. In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires10.1088/0957-4484/22/19/195601 ↗
18. Growth and properties of InGaAs nanowires on silicon10.1002/pssr.201308207 ↗
19. Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform10.1063/1.4993689 ↗
20. Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy10.1063/1.4941407 ↗
21. 2—hydride vapor phase epitaxy for current III–V and nitride semiconductor compound issues10.1016/B978-0-444-63304-0.00002-0 ↗
22. Selective area growth of GaAs nanowires and microplatelet arrays on silicon by hydride vapor-phase epitaxy10.1021/acs.cgd.2c01105 ↗
23. Selective area growth by hydride vapor phase epitaxy and optical properties of InAs nanowire arrays10.1021/acs.cgd.1c00518 ↗
24. Importance of As and Ga balance in achieving long GaAs nanowires by selective area epitaxy10.1021/acs.cgd.3c00172 ↗
25. Tuning the crystal structure and optical properties of selective area grown InGaAs nanowires10.1007/s12274-021-3914-x ↗
26. Pitch-independent realization of 30-nm-diameter InGaAs nanowire arrays by two-step growth method in selective-area metalorganic vapor-phase epitaxy10.7567/APEX.6.025502 ↗
27. Optical absorption of composition-tunable InGaAs nanowire arrays10.1088/1361-6528/ab3ef7 ↗
28. Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies10.1016/S0022-0248(00)00961-1 ↗
29. Kinetically controlled composition of III-V ternary nanostructures
30. Characteristics of strain-induced In x Ga1–x As nanowires grown on Si(111) substrates10.1021/cg300210h ↗
31. Controlled III/V nanowire growth by selective-area vapor-phase epitaxy10.1149/1.3222852 ↗
32. Controlled polytypic and twin-plane superlattices in III–V nanowires10.1038/nnano.2008.359 ↗
33. Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires10.1103/PhysRevB.77.035414 ↗
34. MBE-grown In x Ga1–x As nanowires with 50% composition10.1134/S1063782620060056 ↗
35. Role of microstructure on optical properties in high-uniformity In1–x Ga x As nanowire arrays: evidence of a wider wurtzite band gap10.1103/PhysRevB.87.205303 ↗
36. Empirical expressions for the alloy composition and temperature dependence of the band gap and intrinsic carrier density in Ga x In1−x As10.1063/1.348919 ↗