Development of more highly intelligent products and systematization of nanotechnology
Source abstract
Abstract
Abstract The highest precision fine processing of materials will soon be realized in mass production systems for highdensity 256 Mbit IC memories of ULSis, for which a minimum gate width of 0.25 µ,m with a scattering error width of 30 nm is required. Furthermore, the production yield rate is now said to reach several tens of per cent in 200 mm wafers. However, lately, logic ICs for microprocessors with a least gate width of 0.2 µ,m have become necessary for mass production of ULSis.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Advancements in Semiconductor Devices and Circuit Design
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References
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