MoS₂ Nanostructures with the 1T Phase for Electromagnetic Wave Absorption

Electromagnetic wave absorbers have high research values and application prospects in civil equipment and military informatization fields. As a typical 2D material, MoS2 has grabbed considerable attention for electromagnetic wave absorption due to its large specific surface area, outstanding physical and chemical characteristics, and excellent electronic transmission properties. In particular, 1T-MoS2 has higher electric conductivity and outstanding dielectric loss characteristics, which has promising potential for enhancing electromagnetic wave absorption performance. In this article, the 3D flower-like MoS2 nanostructures with high contents of the 1T phase were triumphantly synthesized by the one-step hydrothermal method. The results show that the effective frequency bandwidth of reflection loss (RL) ≤ −10 dB of the 1T/2H-MoS2 nanostructures with a filler loading ratio of 60 wt % is 5.36 GHz with a matching thickness of 2.04 mm. The maximum RL value of −63.78 dB at 11.12 GHz is achieved with a matching thickness of 2.57 mm. This is a better way to develop high-performance electromagnetic wave absorbers with 1T/2H-MoS2 2D materials.