Corrigendum: Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (2021 Nanotechnology 32 055702)

M Ajmal Khan; Juan Paolo Bermundo; Yasuaki Ishikawa; Hiroshi Ikenoue; Sachie Fujikawa; Eriko Matsuura; Yukio Kashima; Noritoshi Maeda; Masafumi Jo; Hideki Hirayama

doi:10.1088/1361-6528/ac0664

journal article·2021-09-03

Corrigendum: Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (2021 Nanotechnology 32 055702)

M Ajmal Khan, Juan Paolo Bermundo, Yasuaki Ishikawa, Hiroshi Ikenoue, Sachie Fujikawa, Eriko Matsuura, Yukio Kashima, Noritoshi Maeda, Masafumi Jo, Hideki Hirayama

Nanotechnology· Volume 32· Issue 36

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Nanomaterials Materials processing

OpenAlex topics: GaN-based semiconductor devices and materials

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