journal article·2020-11-06

Corrigendum: Optical properties of GaN nanowires grown on chemical vapor deposited-graphene (2019 Nanotechnology 30 214005)

L Mancini, M Morassi, C Sinito, O Brandt, L Geelhaar, Hyun-Gyu Song, Yong-Hoon Cho, N Guan, A Cavanna, J Njeim, A Madouri, C Barbier, L Largeau, A Babichev, F H Julien, L Travers, F Oehler, N Gogneau, J-C Harmand, M Tchernycheva

Nanotechnology· Volume 31· Issue 45
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Abstract

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Source: openalex_inverted_index · Quality: short

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OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Gas Sensing Nanomaterials and Sensors

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References (1)

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1. Radius-dependent homogeneous strain in uncoalesced GaN nanowires10.1016/j.actamat.2020.04.045 ↗